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DiodesZetex N-Channel MOSFET 600 mA, 20 V Enhancement, Surface Mount SOT-23 3-Pin DMN2005K-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3mm |
| Model | DMN2005K-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMN2005K |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 600mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 3.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350mW |
| Typical Gate Charge Qg @ Vgs | 0.5nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 0.7V |
Key Features
- Surface mount device suited for compact electronic designs.
- Enhanced mode channel operation ensuring efficient switching.
- Maximum continuous drain current of 600 mA supports moderate current applications.
- Low maximum drain-source resistance of 3.5 Ω improves conduction efficiency.
- Capable of dissipating up to 350 mW power safely.
- Wide operating temperature range from -65°C to 150°C for robust performance.
- Typical gate charge of 0.5 nC at gate-source voltage supports fast switching.
- Complies with automotive standard AEC-Q101, suitable for automotive electronics.
Product Description
DiodesZetex DMN2005K-7 is a high-quality N-channel MOSFET designed for use in electronic and power management circuits requiring efficient switching and moderate current handling. With a maximum continuous drain current of 600 mA and a maximum drain-source voltage of 20 V, this device operates in enhancement mode to achieve reliable performance.
Featuring a compact SOT-23 3-pin surface mount package, it is well suited for densely packed printed circuit boards in industrial, automotive, consumer electronics, and telecommunications applications. The low maximum drain-source resistance of 3.5 Ω minimizes conduction losses, and a typical gate charge of 0.5 nC allows for fast switching and good efficiency in power control stages.
The MOSFET supports operation over a wide temperature range from -65°C to 150°C, meeting demanding thermal conditions. Rated for a power dissipation of up to 350 mW, it delivers stable performance in small-signal and low power switching applications.
This product conforms to the automotive quality standard AEC-Q101, ensuring its suitability for automotive electronic systems and other high-reliability environments. Its compact dimensions, 3 mm length, 1.4 mm width, and 1 mm height, enable minimization of component footprint on PCBs.
Surface mount SOT-23 3-pin package for space-saving PCB designs. 600 mA maximum continuous drain current for medium current loads. Drain-source voltage rating of 20 V suits low voltage switching circuits. Enhancement mode operation for reliable switching characteristics.
Low Rds(on) value of 3.5 Ω for improved conduction performance. Gate-source voltage maximum rating of 10 V protects gate integrity. Operating temperature range of -65°C to 150°C for extended usage. Typical forward voltage of 0.7 V suitable for efficient power control.
Automotive grade AEC-Q101 certification for use in demanding environments. Ideal for use in industrial, automotive, consumer electronics, and instrumentation applications. Explore EnvMart's extensive semiconductor category for more MOSFET and power management components designed to enhance your electronic system's performance.
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Frequently Asked Questions
The maximum continuous drain current of this model is 600 mA, suitable for moderate current applications.
This MOSFET has a maximum drain-source voltage rating of 20 V, making it suitable for low voltage switching circuits.
It comes in a surface mount SOT-23 package, which is compact and ideal for space-constrained PCB designs.
The operating temperature range is from -65°C to 150°C, allowing for robust performance in various thermal conditions.
This MOSFET can safely dissipate up to 350 mW of power, ensuring stable performance in low power applications.
The maximum drain-source resistance (Rds(on)) is 3.5 Ω, which improves conduction efficiency.
The typical gate charge is 0.5 nC at gate-source voltage, supporting fast switching capabilities.
It complies with the automotive standard AEC-Q101, making it suitable for automotive electronic systems.
The typical forward voltage of this MOSFET is 0.7 V, which is suitable for efficient power control.
This model features a 3-pin configuration, which is standard for SOT-23 packages.
It has an N-channel type, which is designed for enhancement mode operation.
The dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height, allowing for compact design integration.
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