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Vishay 100 V 30 A Trench MOS Barrier Schottky Diode 3-Pin TO-220 V30100C-E3/4W
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 10.4mm |
| Brand | Vishay |
| Height | 15.32mm |
| Length | 10.54mm |
| Model | V30100C-E3/4W |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | V30 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 30A |
| Peak Reverse Repetitive Voltage Vrrm | 100V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 35mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 160A |
| Maximum Forward Voltage Vf | 800mV |
Key Features
- Features patented Trench MOS Barrier Schottky technology for improved switching speed and low forward voltage drop.
- Maximum continuous forward current of 30 amperes ensures high load handling capability.
- Maximum reverse voltage rating of 100 volts provides robust voltage tolerance.
- Peak non-repetitive forward surge current rating is 160 amperes for surge protection.
- Operating temperature range extends from -40°C to 150°C for reliable performance in harsh environments.
- Compact TO-220 through-hole mounting with 3 pins facilitates easy PCB integration.
- Forward voltage drop is 800 millivolts, contributing to high efficiency in power circuits.
- Constructed with a common cathode diode configuration for simplified circuitry.
Product Description
Vishay V30100C-E3/4W is a high-performance Schottky diode featuring Trench MOS Barrier Schottky (TMBS) technology. This diode is built to deliver fast switching speeds and low forward voltage drop, making it ideal for industrial and commercial applications such as AC/DC switched mode-power supplies and DC/DC converters. The patented trench architecture reduces minority carrier injection, minimizing stored charges and enhancing switching efficiency.
This device supports a maximum continuous forward current of 30 amperes and can withstand peak reverse repetitive voltage up to 100 volts. The peak non-repetitive forward surge current is rated at 160 amperes, which protects against transient overloads. Operating temperatures range from -40°C to 150°C, ensuring reliable function in demanding thermal environments.
The diode is housed in a durable TO-220 package with a 3-pin through-hole mount configuration, measuring 15.32 mm in height, 10.54 mm in length, and 4.7 mm in width, with an overall diameter of 10.4 mm for the structure. Its common cathode configuration eases circuit design integration.
Patented Trench MOS Barrier Schottky technology for superior switching speed and efficiency. Maximum continuous forward current: 30 A. Peak reverse repetitive voltage: 100 V. Peak non-repetitive forward surge current: 160 A.
Operating temperature range: -40°C to 150°C. TO-220 3-pin package for reliable through-hole mounting. Forward voltage drop: 800 mV. Common cathode diode configuration.
This diode is particularly suited for applications in industrial electronics, power management, and energy conversion devices where high efficiency and robust electrical performance are critical.
Explore more Schottky diodes and rectifiers at EnvMart to find the right component for your electronic assembly and power conversion solutions.
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Frequently Asked Questions
The maximum continuous forward current of this diode is 30 amperes.
This model has a peak reverse repetitive voltage rating of 100 volts.
The operating temperature range extends from -40°C to 150°C, allowing reliable performance in various environments.
The forward voltage drop for this diode is 800 millivolts, contributing to its efficiency in power circuits.
It is housed in a TO-220 package with a 3-pin through-hole mounting configuration.
The peak non-repetitive forward surge current rating is 160 amperes, providing surge protection.
The diode measures 15.32 mm in height, 10.54 mm in length, and 4.7 mm in width, with a diameter of 10.4 mm.
This diode uses a common cathode configuration, simplifying circuit design integration.
This diode is suitable for applications in industrial electronics, power management, and energy conversion devices.
The peak reverse current rating is 35 milliamperes.
It features patented Trench MOS Barrier Schottky technology for improved switching speed and low forward voltage drop.
The country of origin for this diode is China.
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