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Vishay TrenchFET Type P-Channel Power MOSFET 12 A 30 V Enhancement 6-Pin SOT-363 SIA449DJ-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.8mm |
| Length | 2.15mm |
| Model | SIA449DJ-T1-GE3 |
| Width | 2.15mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.038Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 19W |
| Typical Gate Charge Qg @ Vgs | 23.1nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | -0.8V |
Key Features
- This MOSFET features TrenchFET Gen III technology for low resistance and high efficiency.
- Its maximum power dissipation is rated at 19 W ensuring reliable thermal performance.
- The device operates safely within the temperature range of -55°C to 150°C.
- Gate charge of 23.1 nC at Vgs enhances switching speed and efficiency.
- Compact dimensions of 2.15 mm × 2.15 mm × 0.8 mm enable space-saving PCB designs.
- Surface mount type with 6-pin configuration for easy automated assembly.
- RoHS compliant with no automotive standard certification.
Product Description
Vishay SIA449DJ-T1-GE3 is a high-performance TrenchFET Type P-Channel Power MOSFET designed for efficient power switching applications. Featuring a maximum continuous drain current of 12 A and drain-source voltage of 30 V, this MOSFET ensures robust operation in various industrial, electronic, and power management systems.
The device employs advanced TrenchFET Gen III technology providing very low on-resistance (Rds(on)) of 0.038 Ω, which contributes to reducing conduction losses and improving overall energy efficiency. Its enhancement mode channel type allows for effective control in switching circuits.
Designed for surface mounting, this MOSFET comes in a compact SOT-363 package with 6 pins, measuring 2.15 mm in length and width and 0.8 mm in height, facilitating compact PCB layouts in dense electronic assemblies.
The device supports a maximum power dissipation of 19 W and can operate reliably in ambient temperatures ranging from -55°C to 150°C, making it suitable for demanding industrial environments. The typical gate charge of 23.1 nC at gate-source voltage ensures fast switching capabilities with minimal power loss.
This MOSFET is compliant with RoHS standards, ensuring environmental safety and regulatory compliance. It lacks automotive standard certification and is manufactured in China. This MOSFET features TrenchFET Gen III technology for low resistance and high efficiency.
Its maximum power dissipation is rated at 19 W ensuring reliable thermal performance. The device operates safely within the temperature range of -55°C to 150°C. Gate charge of 23.1 nC at Vgs enhances switching speed and efficiency.
Compact dimensions of 2.15 mm × 2.15 mm × 0.8 mm enable space-saving PCB designs. Surface mount type with 6-pin configuration for easy automated assembly. RoHS compliant with no automotive standard certification.
This MOSFET is ideal for industrial, electronic, power management, and control system applications requiring efficient switching and thermal performance. Browse Vishay Power MOSFETs on EnvMart to explore more semiconductor components for your projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
This MOSFET has a maximum drain-source voltage of 30 V.
It has a maximum power dissipation rating of 19 W.
The dimensions of this model are 2.15 mm in length, 2.15 mm in width, and 0.8 mm in height.
The typical gate charge at gate-source voltage (Vgs) is 23.1 nC.
It operates safely within a temperature range of -55°C to 150°C.
This model is designed for surface mounting.
The SIA449DJ-T1-GE3 features a 6-pin configuration.
This device is a Type P-Channel MOSFET.
It is compliant with RoHS standards.
The maximum drain-source resistance (Rds(on)) is rated at 0.038 Ω.
This MOSFET is suitable for industrial, electronic, power management, and control system applications requiring efficient switching.
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