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onsemi IRL Type N-Channel Enhancement Mode MOSFET 18 A 200 V TO-220 Package IRL640A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | IRL640A |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRL |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Enhancement mode N-Channel MOSFET designed for efficient switching.
- Maximum continuous drain current of 18 amperes for high load applications.
- 200 volts maximum drain-source voltage supports medium voltage circuits.
- Low on resistance of 180 milliohms minimizing conduction losses.
- High power dissipation capability of 110 watts with proper cooling.
- Typical gate charge of 40 nanocoulombs at Vgs, enabling fast switching.
- Maximum gate-source voltage rating of 20 volts.
- Operating temperature range from -55°C to 150°C for rugged environments.
Product Description
onsemi IRL640A is a high-performance N-Channel Enhancement Mode MOSFET optimized for power switching applications in electronics and electrical systems. Featuring a maximum continuous drain current of 18 A and a drain-source voltage rating of 200 V, this MOSFET is well-suited for medium power industrial, automotive, and consumer electronics circuits.
The device comes in a durable TO-220 3-pin package with through-hole mounting, ensuring reliable soldering and mechanical stability. Utilizing Fairchild Semiconductor's proprietary high cell density DMOS technology, it provides low on-state resistance (180 mΩ) which minimizes conduction losses and improves efficiency.
With a maximum power dissipation of 110 W, IRL640A can handle significant loads when adequate heat sinking is used. Its gate charge of 40 nC facilitates fast switching, which is advantageous for power conversion and regulation circuits.
Operating temperature ranges from -55°C to 150°C make this MOSFET suitable for harsh environments and industrial usages. The package dimensions are compact and standardized for easy integration.
This transistor is widely used in power management, motor drives, switching regulators, and other semiconductor electronic component applications in industrial plants, manufacturing, automotive, and laboratory equipment.
Enhancement mode N-Channel design with proprietary DMOS technology. High current capacity with robust continuous operation at 18 A. High voltage handling up to 200 V drain-source voltage. Low Rds(on) for energy efficient switching.
Fast switching enabled by low gate charge. Wide operating temperature range ensures reliability. Industry standard TO-220 3-pin package for easy PCB mounting. Ideal for industrial, automotive, and consumer electronics power circuits.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 A, making it suitable for high load applications.
The IRL640A has a maximum drain-source voltage rating of 200 V, which supports medium voltage circuits.
It features a low on-state resistance of 180 milliohms, which helps minimize conduction losses during operation.
The maximum power dissipation capability of the IRL640A is 110 W, provided that adequate heat sinking is used.
The typical gate charge at Vgs for the IRL640A is 40 nanocoulombs, enabling fast switching.
This model operates within a temperature range of -55°C to 150°C, making it suitable for rugged environments.
The IRL640A is packaged in a TO-220 format, which is a standard 3-pin through-hole mount type.
The dimensions of this MOSFET are 16.3 mm in height, 10.67 mm in length, and 4.7 mm in width.
This model features an N-Channel enhancement mode design, optimized for power switching applications.
The maximum gate-source voltage rating for the IRL640A is 20 V.
This MOSFET is widely used in power management, motor drives, and switching regulators in various industrial and automotive applications.
The forward voltage for this model is 1.5 V.
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