onsemi PNP Power Transistor, -3 A Max DC Collector Current, -100 V Collector Emitter Voltage, TO-252 3-Pin DPAK NJVMJD32CT4G

onsemi NJVMJD32CT4G is a PNP power transistor designed for robust electronic applications requiring high collector current and voltage ratings. This 3-Pin transistor housed in a TO-252 (DPAK) package excels in surface mount technology environments and offers reliable performance with a maximum DC collector current of -3 A and a collector emitter voltage rating of -100 V.

The transistor is well-suited for industrial and automotive applications as it meets the AEC-Q101 automotive standard, ensuring quality and durability under demanding conditions. It provides a power dissipation capacity of 15 W and operates efficiently within a temperature range from -65°C to 150°C, making it adaptable to a wide variety of ambient environments.

This device features a minimum DC current gain (hFE) of 25 and a maximum transition frequency of 1 MHz, suitable for switching and amplification purposes in power electronics circuits. Its compact dimensions of 6.73 mm length, 2.38 mm width, and 0.09 mm height enable dense circuit board layouts. The pin count of 3 facilitates easy integration into power control modules and driver circuits.

The NJVMJD32CT4G transistor supports a maximum collector base voltage of 100 V and a maximum emitter base voltage of 5 V, ensuring robustness in signal control. Its single transistor configuration with PNP polarity makes it ideal for complementing NPN devices in push-pull or amplifier stages.

Common use cases include switching regulators, power amplifiers, motor control circuits, and automotive electronic systems. Its surface mount design streamlines automated assembly lines, improving manufacturing efficiency.

Designed for surface mount applications with TO-252 package type. Supports maximum power dissipation of 15 W for reliable operation. Offers a minimum DC current gain (hFE) of 25. Operating temperature range from -65°C to 150°C suits industrial conditions.

Automotive grade compliant with AEC-Q101 standard. Compact dimensions: length 6.73 mm, width 2.38 mm, height 0.09 mm. Single transistor configuration with PNP polarity. Maximum transition frequency of 1 MHz for medium frequency switching.

Mount type is surface mount ensuring easy PCB integration. Explore a wide range of Bipolar Transistors and power semiconductors at EnvMart for industrial, automotive, and electronic circuit design needs.