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Taiwan Semiconductor Transistor NPN 100 mA 65 V 3-Pin SOT-23 BC846B RF

Category Bipolar Transistors Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin Taiwan
Brand Taiwan Semiconductor
Height 1.12mm
Length 3.04mm
Model BC846B RF
Width 2.64mm
Mount Type Surface
Series BC846
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single

Key Features

  • This transistor features a maximum collector current of 100 mA for reliable switching performance.
  • It has a maximum collector emitter voltage rating of 65 V allowing operation in moderate voltage circuits.
  • The device supports a maximum power dissipation of 250 mW, ensuring thermal stability during operation.
  • It is configured as a single transistor with NPN polarity for general purpose electronic circuits.
  • The transistor features a minimum DC current gain (hFE) of 100 for effective amplification.
  • Designed for surface mount with a compact 3-pin SOT-23 package for space-saving PCB layouts.
  • It can operate up to a maximum temperature of 150°C, suitable for industrial environments.
  • The maximum emitter base voltage is rated at 6 V which protects the junction during switching.

Product Description

Taiwan Semiconductor BC846B RF is a high-quality bipolar NPN transistor designed for use in various electronic applications requiring moderate current and voltage ratings. It comes in a 3-pin SOT-23 surface mount package which facilitates easy integration onto modern printed circuit boards.

This transistor supports a maximum DC collector current of 100 mA, making it suitable for low to medium power amplification and switching tasks. It safely handles collector emitter voltages up to 65 V along with a maximum collector base voltage of 80 V to ensure reliable electrical performance under typical operating conditions.

The device dissipates up to 250 mW of power and maintains operational stability at temperatures as high as 150°C, making it appropriate for industrial and commercial electronics environments. Its minimum DC current gain (hFE) of 100 provides efficient signal amplification in analog circuits.

The compact SOT-23 package measures approximately 3.04 mm in length, 2.64 mm in width, and 1.12 mm in height, enabling compact device designs without compromising performance. The transistor’s single NPN configuration is ideal for general purpose uses including switching regulators, signal amplifiers, and more.

This transistor is manufactured in Taiwan, Province Of China. It is supplied new and is suitable for use in diverse applications such as industrial control systems, consumer electronics, instrumentation, and communications equipment.

This transistor features a maximum collector current of 100 mA for reliable switching performance. It has a maximum collector emitter voltage rating of 65 V allowing operation in moderate voltage circuits. The device supports a maximum power dissipation of 250 mW, ensuring thermal stability during operation.

It is configured as a single transistor with NPN polarity for general purpose electronic circuits. The transistor features a minimum DC current gain (hFE) of 100 for effective amplification. Designed for surface mount with a compact 3-pin SOT-23 package for space-saving PCB layouts.

It can operate up to a maximum temperature of 150°C, suitable for industrial environments. The maximum emitter base voltage is rated at 6 V which protects the junction during switching. The compact physical dimensions are length 3.04 mm, width 2.64 mm, height 1.12 mm, for low-profile electronics integration.

Explore more Bipolar Transistors and discrete semiconductors in EnvMart’s electronics components category to find suitable options for your next industrial or laboratory project.

Taiwan Semiconductor Transistor NPN 100 mA 65 V 3-Pin SOT-23 BC846B RF
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, making it suitable for low to medium power applications.

It has a maximum collector-emitter voltage rating of 65 V, allowing operation in moderate voltage circuits.

This transistor is packaged in a compact 3-pin SOT-23 surface mount configuration, which facilitates easy integration onto PCBs.

The maximum power dissipation supported by this transistor is 250 mW, ensuring thermal stability during operation.

The minimum DC current gain (hFE) for this transistor is 100, providing effective amplification in electronic circuits.

The dimensions of this model are approximately 3.04 mm in length, 2.64 mm in width, and 1.12 mm in height.

It can operate at a maximum temperature of 150°C, making it suitable for industrial environments.

The maximum emitter-base voltage (VEBO) is rated at 6 V, which protects the junction during switching operations.

This model is configured as a single NPN transistor, suitable for general-purpose electronic circuits.

It is suitable for various applications including switching regulators, signal amplifiers, industrial control systems, and consumer electronics.

The maximum collector-base voltage (VCBO) for this model is 80 V, ensuring reliable electrical performance under typical conditions.

This transistor is manufactured in Taiwan, Province Of China.

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