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Nexperia Bipolar Transistor, 100 mA NPN, 45 V, 4-Pin SOT-143B, Current Mirror Configuration BCM61B,215

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Nexperia Bipolar Transistor, 100 mA NPN, 45 V, 4-Pin SOT-143B, Current Mirror Configuration BCM61B,215

Name: Nexperia Bipolar Transistor, 100 mA NPN, 45 V, 4-Pin SOT-143B, Current Mirror Configuration BCM61B,215
Brand: Nexperia
SKU: 106298
Price: 0.23 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	BCM61B,215
Width	2.5mm
Mount Type	Surface
Series	BCM61B
Maximum Operating Temperature	150°C
Package Type	SOT-143B
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	4
Maximum Collector Emitter Voltage Vceo	45V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	390mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Current Mirror
Maximum Transition Frequency ft	250MHz

Key Features

This transistor uses a 4-pin SOT-143B surface mount package.
Maximum collector current is rated at 100 mA, suitable for low power applications.
It supports a maximum power dissipation of 390 mW.
The device operates reliably between -65°C and 150°C.
The minimum DC current gain (hFE) is 200, ensuring efficient amplification.
Its maximum transition frequency is 250 MHz for high-speed performance.
This transistor complies with RoHS standards and meets the automotive AEC-Q101 standard.
The package dimensions are approximately 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

Product Description

Nexperia BCM61B,215 Bipolar Transistor is a low-power NPN transistor designed for precise current mirror applications with a DC collector current of 100 mA and voltage rating of 45 V. It is housed in a compact 4-pin SOT-143B surface mount package, suitable for dense PCB layouts.

This transistor is engineered to operate in a wide temperature range from -65°C to 150°C, making it ideal for automotive and industrial environments. The device features a minimum DC current gain of 200, ensuring high amplification efficiency, and a maximum transition frequency of 250 MHz for fast switching requirements.

Compliant with the RoHS directive and meeting the automotive AEC-Q101 qualification, it supports reliability in demanding applications. The package dimensions are 3 mm length, 2.5 mm width, and 1.1 mm height, which facilitates compact electronic circuit designs.

Technical parameters include a maximum power dissipation of 390 mW, maximum collector base voltage of 50 V, and maximum emitter base voltage of 6 V. The transistor’s current mirror configuration provides stable and accurate current replication crucial for analog circuits.

This transistor uses a 4-pin SOT-143B surface mount package. Maximum collector current is rated at 100 mA, suitable for low power applications. It supports a maximum power dissipation of 390 mW. The device operates reliably between -65°C and 150°C.

The minimum DC current gain (hFE) is 200, ensuring efficient amplification. Its maximum transition frequency is 250 MHz for high-speed performance. This transistor complies with RoHS standards and meets the automotive AEC-Q101 standard.

The package dimensions are approximately 3 mm in length, 2.5 mm in width, and 1.1 mm in height. The transistor has a maximum collector base voltage of 50 V and a maximum emitter base voltage of 6 V.

This bipolar transistor is widely used in electronic, industrial, automotive, and manufacturing sectors where precise current control and amplification are required. EnvMart offers this reliable semiconductor component for various PCB applications and power management solutions.

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