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DiodesZetex N-Channel MOSFET 1.3 A 20 V Enhancement, 3-Pin X2-DFN Package DMN2300UFB4-7B

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 0.35mm
Length 1.05mm
Model DMN2300UFB4-7B
Width 0.65mm
Mount Type Surface
Series DMN
Maximum Operating Temperature 150°C
Package Type X2-DFN
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 1.3A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 500mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 1.6nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf 0.7V

Key Features

  • This MOSFET features a maximum continuous drain current of 1.3 A.
  • It supports a maximum drain source voltage of 20 V for reliable operation.
  • The 3-pin X2-DFN surface mount package ensures space savings on PCBs.
  • With a low drain-source resistance of 500 milliohms, it offers improved efficiency.
  • The device operates at a maximum temperature of 150°C, suitable for demanding environments.
  • Typical gate charge is 1.6 nanocoulombs, facilitating fast switching.
  • It supports an enhancement mode channel and is rated for a maximum gate-source voltage of 8 V.
  • The MOSFET complies with AEC-Q101 automotive standards for robustness.

Product Description

DiodesZetex DMN2300UFB4-7B is a specialist N-Channel MOSFET designed for efficient power control applications. Featuring a maximum continuous drain current of 1.3 amperes and a maximum drain-source voltage of 20 volts, the device suits compact and high-performance electronic circuits.

This MOSFET is housed in a low-profile 3-pin X2-DFN surface mount package measuring 1.05 mm in length, 0.65 mm in width, and 0.35 mm in height, offering effective thermal and electrical properties while enabling high-density PCB layouts.

Key electrical characteristics include a low maximum drain-source resistance of 500 milliohms, a typical gate charge of 1.6 nanocoulombs at specified gate-to-source voltage, and a maximum power dissipation of 500 milliwatts. It supports enhancement mode operation with a maximum gate-to-source voltage of 8 volts and a forward voltage drop of 0.7 volts, suitable for switching applications requiring low losses.

The device is qualified under the AEC-Q101 automotive standard, ensuring reliability and quality for automotive and industrial environments. It operates reliably across a wide temperature range from -55°C to 150°C, making it ideal for demanding HVAC, automotive electronics, industrial control systems, and consumer electronics applications.

This MOSFET features a maximum continuous drain current of 1.3 A. It supports a maximum drain source voltage of 20 V for reliable operation. The 3-pin X2-DFN surface mount package ensures space savings on PCBs. With a low drain-source resistance of 500 milliohms, it offers improved efficiency.

The device operates at a maximum temperature of 150°C, suitable for demanding environments. Typical gate charge is 1.6 nanocoulombs, facilitating fast switching. It supports an enhancement mode channel and is rated for a maximum gate-source voltage of 8 V.

The MOSFET complies with AEC-Q101 automotive standards for robustness. Operating temperature range spans from -55°C to 150°C, covering industrial applications.

This DiodesZetex MOSFET with model DMN2300UFB4-7B is ideal for industrial electronics, automotive systems, power management, and embedded computing applications. Browse EnvMart for more semiconductor solutions and DiodesZetex brand products to meet your design and manufacturing requirements.

DiodesZetex N-Channel MOSFET 1.3 A 20 V Enhancement, 3-Pin X2-DFN Package DMN2300UFB4-7B
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Frequently Asked Questions

The maximum continuous drain current of this MOSFET is 1.3 A.

This model supports a maximum drain-source voltage of 20 V.

It is housed in a 3-pin X2-DFN surface mount package.

The maximum operating temperature for this model is 150°C.

The typical gate charge is 1.6 nanocoulombs.

It is rated for a maximum gate-source voltage of 8 V.

The dimensions of the package are 1.05 mm in length, 0.65 mm in width, and 0.35 mm in height.

The maximum drain-source resistance is 500 milliohms.

It complies with the AEC-Q101 automotive standard.

The forward voltage drop is rated at 0.7 volts.

The minimum operating temperature is -55°C.

This MOSFET is suitable for applications in automotive systems, power management, and embedded computing.

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