World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi Isolated Dual P-Channel and N-Channel Power MOSFET 510 mA 60 V Enhancement Mode 6-Pin SOT-23 NDC7001C

Free Delivery in India | Lowest Global Shipping Charges

onsemi Isolated Dual P-Channel and N-Channel Power MOSFET 510 mA 60 V Enhancement Mode 6-Pin SOT-23 NDC7001C

Name: onsemi Isolated Dual P-Channel and N-Channel Power MOSFET 510 mA 60 V Enhancement Mode 6-Pin SOT-23 NDC7001C
Brand: onsemi
SKU: 104846
Price: 0.32 USD
Availability: InStock



Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	3mm
Model	NDC7001C
Width	1.7mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	6
Number of Elements per Chip	2
Channel Type	Type P, Type N
Maximum Continuous Drain Current Id	510mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	960mW
Typical Gate Charge Qg @ Vgs	1.1nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	0.8V
Transistor Configuration	Isolated

Key Features

Features ON Semi's DMOS technology for fast switching and low on-state resistance.
Designed for low voltage and low current switching applications.
Includes dual transistor configuration with isolated channels.
Compact surface-mount SOT-23 6-pin package measuring 3 mm length by 1.7 mm width.
Operates reliably from -55°C to 150°C.
Maximum power dissipation of 960 mW supports efficient thermal management.
High saturation current and copper lead frame optimize electrical and thermal performance.
Typical gate charge is 1.1 nC, enabling fast gate switching.

Product Description

onsemi NDC7001C is a dual channel isolated power MOSFET integrating both P-type and N-type enhancement mode transistors in a compact 6-pin SOT-23 package. Designed using ON Semi's proprietary DMOS technology, this device offers high-performance switching with superior reliability and low on-state resistance, ensuring minimal conduction losses in low voltage and low current applications.

This MOSFET supports a maximum continuous drain current of 510 mA and a maximum drain-source voltage of 60 V, making it suitable for a range of power control scenarios. It efficiently dissipates up to 960 mW power, aided by its copper lead frame construction that enhances thermal conductivity and electrical performance.

The device operates over a wide temperature range from -55°C to 150°C, offering ruggedness for demanding electronic environments. Its typical gate charge is 1.1 nC at gate-source voltage, facilitating rapid switching and improving overall circuit responsiveness.

With a maximum gate-source voltage of 20 V and a forward voltage drop of 0.8 V, the NDC7001C ensures device protection and efficient operation. The MOSFET's isolated transistor configuration supports diverse switching power supplies, low current control circuits, and other low voltage applications.

Incorporates advanced DMOS technology for high switching speed and reliability. Compact SOT-23 surface mount package allows space-saving PCB layouts. Dual P-Channel and N-Channel isolation enhances circuit flexibility. Suitable for use in power supplies, switching regulators, and low current load driving.

Wide operating temperature range assures robust performance under industrial conditions.

Ideal for industrial, electronics manufacturing, laboratory, and commercial applications requiring efficient power control componentry. The NDC7001C supports both automated and manual assembly processes with its surface-mount design.

Explore more semiconductor components and power MOSFETs at EnvMart to support your engineering and manufacturing projects with high quality and reliable products.