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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML2244TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 6.9nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | -1.2V |
Infineon IRLML2244TRPBF HEXFET Type P-Channel MOSFET is engineered to provide reliable and efficient switching performance in a small SOT-23 surface-mount package. With a maximum continuous drain current of 4.3 A and a maximum drain-source voltage of 20 V, this device supports a variety of low-voltage electronic and automation applications. It features enhancement mode operation with low gate charge and low RDS(on) to minimize switching losses and improve overall system efficiency.
The device's high thermal tolerance, capable of operating from -55°C up to 150°C, ensures functional stability in harsh industrial and automotive environments. Its compact form factor with a pin count of 3 supports easy integration into PCB designs, facilitating high-volume manufacturing processes. The MOSFET’s typical gate charge of 6.9 nC and maximum power dissipation of 1.3 W make it well suited for use in motor control circuits, DC-DC converters, and power supply regulation, optimizing energy management.
This component's low forward voltage of -1.2 V and maximum gate-source voltage rating of 12 V enhance operational flexibility. Although not certified for automotive standards, its robust construction allows it to perform reliably in demanding industrial power switching roles. As part of the HEXFET series, it ensures industry-standard pin compatibility and device reliability for diverse semiconductor applications.
Features a low RDS(on) of 54 mΩ for minimized switching losses. Operates in enhancement mode with a maximum power dissipation of 1.3 W. Supports an operating temperature range from -55°C to 150°C for versatile environments.
Designed for surface mount technology with a standard compatible pinout. Maximum gate-source voltage rating of 12 V for robust gate control. Typical gate charge is only 6.9 nC, improving switching efficiency. Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height fit automated PCB layouts.
Ideal for low-voltage power management and switching applications in electronics and automation. Suitable for use in motor control systems and energy-efficient power supplies.
Infineon HEXFET MOSFETs like the IRLML2244TRPBF are widely used in industrial electronics, automation, and power management systems. Explore the Electronics & Electricals > Semiconductor > MOSFET category on EnvMart for a comprehensive selection of similar power devices with optimized efficiency and durability.
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