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Infineon HEXFET Type P-Channel MOSFET 4.3 A 20 V Enhancement Mode 3-Pin SOT-23 IRLML2244TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.02mm
Length 3.04mm
Model IRLML2244TRPBF
Width 1.4mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 4.3A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 95mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.3W
Typical Gate Charge Qg @ Vgs 6.9nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf -1.2V

Key Features

  • Features a low RDS(on) of 54 mΩ for minimized switching losses.
  • Operates in enhancement mode with a maximum power dissipation of 1.3 W.
  • Supports an operating temperature range from -55°C to 150°C for versatile environments.
  • Designed for surface mount technology with a standard compatible pinout.
  • Maximum gate-source voltage rating of 12 V for robust gate control.
  • Typical gate charge is only 6.9 nC, improving switching efficiency.
  • Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height fit automated PCB layouts.
  • Ideal for low-voltage power management and switching applications in electronics and automation.

Product Description

Infineon IRLML2244TRPBF HEXFET Type P-Channel MOSFET is engineered to provide reliable and efficient switching performance in a small SOT-23 surface-mount package. With a maximum continuous drain current of 4.3 A and a maximum drain-source voltage of 20 V, this device supports a variety of low-voltage electronic and automation applications. It features enhancement mode operation with low gate charge and low RDS(on) to minimize switching losses and improve overall system efficiency.

The device's high thermal tolerance, capable of operating from -55°C up to 150°C, ensures functional stability in harsh industrial and automotive environments. Its compact form factor with a pin count of 3 supports easy integration into PCB designs, facilitating high-volume manufacturing processes. The MOSFET’s typical gate charge of 6.9 nC and maximum power dissipation of 1.3 W make it well suited for use in motor control circuits, DC-DC converters, and power supply regulation, optimizing energy management.

This component's low forward voltage of -1.2 V and maximum gate-source voltage rating of 12 V enhance operational flexibility. Although not certified for automotive standards, its robust construction allows it to perform reliably in demanding industrial power switching roles. As part of the HEXFET series, it ensures industry-standard pin compatibility and device reliability for diverse semiconductor applications.

Features a low RDS(on) of 54 mΩ for minimized switching losses. Operates in enhancement mode with a maximum power dissipation of 1.3 W. Supports an operating temperature range from -55°C to 150°C for versatile environments.

Designed for surface mount technology with a standard compatible pinout. Maximum gate-source voltage rating of 12 V for robust gate control. Typical gate charge is only 6.9 nC, improving switching efficiency. Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height fit automated PCB layouts.

Ideal for low-voltage power management and switching applications in electronics and automation. Suitable for use in motor control systems and energy-efficient power supplies.

Infineon HEXFET MOSFETs like the IRLML2244TRPBF are widely used in industrial electronics, automation, and power management systems. Explore the Electronics & Electricals > Semiconductor > MOSFET category on EnvMart for a comprehensive selection of similar power devices with optimized efficiency and durability.

Infineon HEXFET Type P-Channel MOSFET 4.3 A 20 V Enhancement Mode 3-Pin SOT-23 IRLML2244TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.3 A.

This MOSFET has a maximum drain-source voltage rating of 20 V.

It supports an operating temperature range from -55°C to 150°C.

The typical gate charge is 6.9 nC, which improves switching efficiency.

It features a low RDS(on) value of 54 mΩ for minimized switching losses.

The dimensions of the package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.

The maximum power dissipation is 1.3 W.

This model is designed for surface mount technology.

The maximum gate-source voltage rating is 12 V.

It is suitable for low-voltage power management and switching applications, including motor control circuits and DC-DC converters.

The forward voltage is -1.2 V.

This MOSFET has a pin count of 3.

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