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onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin FDME1023PZT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.5mm |
| Length | 1.6mm |
| Model | FDME1023PZT |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MicroFET Thin |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 142mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 7.7nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET features a low drain-source resistance of 142 mΩ for increased efficiency.
- It uses a 6-pin MicroFET Thin surface-mount package for compact design integration.
- The enhancement mode channel ensures precise switching with a maximum gate-source voltage of 8 V.
- Operates reliably in temperatures ranging from -55°C to 150°C for industrial applications.
- Typical gate charge of 7.7 nC supports fast switching in power supply circuits.
- Soft body diode operation helps reduce snubber circuits or replace higher voltage MOSFETs.
- Isolated transistor configuration improves electrical isolation in sensitive circuits.
- Compliant with RoHS standards and designed for surface mounting on PCB assemblies.
Product Description
onsemi FDME1023PZT Isolated PowerTrench 2 Type P-Channel Power MOSFET is a high-efficiency semiconductor device designed for switching and power control applications. Featuring a maximum continuous drain current of 2.6 A and a drain-source voltage rating of 20 V, this enhancement mode MOSFET provides reliable performance in electronic and power distribution circuits.
The device employs onsemi’s advanced PowerTrench technology with shielded-gate structure to deliver low on-resistance (142 mΩ) and fast switching capabilities, making it ideal for synchronous rectification and DC/DC conversion. The typical gate charge of 7.7 nC ensures minimal gate driver losses and improved energy efficiency.
Housed in a compact 6-pin MicroFET Thin surface mount package measuring 1.6 mm x 1.6 mm x 0.5 mm, the FDME1023PZT is optimized for space-constrained applications in consumer electronics, automotive, industrial control systems, and telecommunications equipment.
Key electrical properties include a maximum power dissipation of 1.4 W, forward voltage of 1.2 V, and capability to operate in a wide ambient temperature range from -55°C to 150°C. The isolated transistor configuration enhances safety and circuit protection by preventing unwanted current flow between elements.
This MOSFET is RoHS compliant, supporting environmentally conscious manufacturing processes. It is designed for surface mounting on PCBs, facilitating automated assembly and cost-effective production.
Low continuous drain current of 2.6 A with 20 V rating for power applications. Advanced shielded-gate MOSFET technology with low on-resistance. Compact 6-pin MicroFET Thin package for integration in small devices. Wide operating temperature range for use in harsh industrial environments.
Soft body diode function reduces need for additional snubber circuits. Typical gate charge of 7.7 nC for efficient switching performance. Isolated transistor configuration for improved circuit isolation and safety. RoHS compliance assures environmentally friendly manufacturing.
This MOSFET is suitable for various industrial, commercial, and consumer electronics power conversion and control applications. For more semiconductor and power component solutions, explore EnvMart’s extensive electronics category offerings.
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Frequently Asked Questions
The maximum continuous drain current of this model is 2.6 A.
This MOSFET has a maximum drain-source voltage rating of 20 V.
The typical gate charge for the FDME1023PZT is 7.7 nC.
It features a low drain-source resistance of 142 mΩ.
The dimensions of the MicroFET Thin package are 1.6 mm x 1.6 mm x 0.5 mm.
This model operates reliably in temperatures ranging from -55°C to 150°C.
It uses an isolated transistor configuration, which improves electrical isolation in sensitive circuits.
The maximum power dissipation for this MOSFET is 1.4 W.
Yes, this model is compliant with RoHS standards.
The maximum gate-source voltage for this MOSFET is 8 V.
This MOSFET is suitable for various industrial, commercial, and consumer electronics power conversion and control applications.
This MOSFET is designed for surface mounting on PCB assemblies.
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