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onsemi Type N-Channel MOSFET 20 A 650 V Enhancement Mode 3-Pin TO-263 NVB190N65S3F
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.58mm |
| Length | 10.67mm |
| Model | NVB190N65S3F |
| Width | 9.65mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 162W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | 30V |
Key Features
- Enhancement mode Type N-Channel MOSFET with 20 A continuous drain current.
- Supports a maximum drain-source voltage of 650 V in a TO-263 3-pin package.
- Features ultra low typical gate charge of 34 nC for reduced switching loss.
- Maximum power dissipation rated at 162 W with operating temperature range from -55°C to 150°C.
- Complies with automotive standard AEC-Q101 for reliability in demanding applications.
- Compact dimensions of 10.67 mm length, 9.65 mm width, and 4.58 mm height for efficient PCB layout.
- Optimized reverse recovery body diode enhances switching performance and system reliability.
Product Description
onsemi NVB190N65S3F Type N-Channel MOSFET is a high voltage SUPERFET III MOSFET designed using advanced super-junction charge balance technology. It delivers outstanding low on-resistance (typical RDS(on) = 158 mΩ) and ultra low typical gate charge (typ. Qg = 34 nC), optimized to minimize conduction losses and enhance switching speed.
This 3-pin TO-263 package device supports a maximum continuous drain current of 20 A and a maximum drain-source voltage of 650 V, making it suitable for power applications demanding efficient energy conversion.
Designed for surface mounting, it offers a maximum power dissipation of 162 W, enabling its use in demanding HV DC/DC converters and industrial power systems. The MOSFET operates reliably over a wide temperature range from -55°C to 150°C and withstands a maximum gate-source voltage of 30 V.
Its optimized body diode reverse recovery characteristics reduce switching losses and improve system reliability in critical applications. The compact footprint with a length of 10.67 mm, width of 9.65 mm, and height of 4.58 mm allows for efficient PCB layout and miniaturization.
This MOSFET is fully compliant with the automotive AEC-Q101 standard, catering to automotive and industrial use cases requiring robust semiconductors. The device is ideal for industrial, automotive, construction, and manufacturing sectors where reliable power switching and high efficiency are paramount.
With its superior switching capabilities and rugged design, the onsemi NVB190N65S3F supports high-efficiency power conversion in a variety of electronics systems. It is well suited for applications including high voltage DC/DC converters and other power management solutions.
Explore more high-quality semiconductors and MOSFET solutions in the EnvMart electronics components catalog to find the perfect fit for your industrial and manufacturing projects.
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Frequently Asked Questions
The maximum continuous drain current of this model is 20 A.
It can handle a maximum drain-source voltage of 650 V.
The dimensions of the TO-263 package are 10.67 mm in length, 9.65 mm in width, and 4.58 mm in height.
The typical gate charge is 34 nC.
The maximum power dissipation is rated at 162 W.
It operates within a temperature range of -55°C to 150°C.
It complies with the automotive standard AEC-Q101.
This model uses a Type N-channel configuration.
The maximum gate-source voltage is 30 V.
The package type is TO-263.
The maximum drain-source resistance (RDS(on)) is 190 mΩ.
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