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onsemi Type N-Channel MOSFET 24A 650V Enhancement 3-Pin TO-263 Surface Mount NVB150N65S3F

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onsemi Type N-Channel MOSFET 24A 650V Enhancement 3-Pin TO-263 Surface Mount NVB150N65S3F

Name: onsemi Type N-Channel MOSFET 24A 650V Enhancement 3-Pin TO-263 Surface Mount NVB150N65S3F
Brand: onsemi
SKU: 83577

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	4.58mm
Length	10.67mm
Model	NVB150N65S3F
Width	9.65mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	24A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	150mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	192W
Typical Gate Charge Qg @ Vgs	43nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.3V

Key Features

Advanced SUPERFET III N-channel MOSFET for power switching and automotive applications.
Delivers 24A maximum continuous drain current for robust electrical performance.
650V maximum drain-source voltage enables compatibility with high-voltage systems.
TO-263 3-pin surface mount package optimizes PCB integration and thermal dissipation.
Enhancement mode with ultra low gate charge and low effective output capacitance.
Typical gate charge of 43nC and maximum drain-source resistance of 150mΩ.
Supports maximum power dissipation up to 192W for demanding loads.
Automotive-grade, compliant with AEC-Q101 standard for reliability in automotive environments.

Product Description

onsemi NVB150N65S3F is a high-performance Type N-Channel MOSFET engineered for demanding power systems and automotive electronics. This device features a 24A maximum continuous drain current and a 650V drain-source voltage rating, making it suitable for applications requiring high efficiency and resilience against voltage stress.

Based on advanced SUPERFET III technology, NVB150N65S3F offers outstanding low on-resistance and ultra-low gate charge, reducing conduction losses and improving switching performance. The enhancement-mode channel ensures precise electronic control, supporting miniaturized designs and higher operational efficiency. With a typical gate charge of 43nC and a drain-source resistance as low as 150mΩ, the MOSFET is optimized for fast switching and reliable performance in industrial and automotive power electronics.

The device is built in a TO-263 3-pin package, featuring a surface-mount design that facilitates robust PCB integration and efficient heat dissipation. It operates across a wide temperature range, from -55°C to 150°C, ensuring stable functionality in harsh environments. The maximum power dissipation of 192W meets power requirements in automotive on-board chargers and DC/DC converters for hybrid electric vehicles.

NVB150N65S3F is compliant with the automotive AEC-Q101 standard, providing enhanced reliability for on-board vehicle systems. The optimized reverse recovery performance of the body diode further improves system reliability and reduces the need for additional components. The device also maintains Pb-free status and meets restrictive environmental requirements for modern electronic designs.

Typical applications include automotive power conversion, on-board charging for electric vehicles, industrial switch-mode power supplies, and other high-voltage power management scenarios. The MOSFET is highly suited to systems targeting miniaturization, high frequency operation, and superior switching efficiency.

Explore additional MOSFET options and electronics semiconductors in the EnvMart catalogue for tailored solutions across industrial, automotive, power electronics, and laboratory use cases.