Infineon Transistor, PNP Bipolar, 3 A Collector Current, 100 V Collector-Emitter Voltage, 3-Pin SOT-223 BDP954H6327XTSA1

The Infineon BDP954H6327XTSA1 is a high-performance bipolar PNP transistor engineered for electronic components requiring robust switching and amplification capabilities. Rated for a maximum DC collector current of 3 amperes and a collector-emitter voltage of 100 volts, it is designed primarily for surface mounting in modern PCB assemblies using the SOT-223 (SC-73) package.

This transistor is configured as a single PNP device, ensuring straightforward integration into a variety of circuit designs. It offers a maximum power dissipation of 5 watts, optimising energy management in compact electronic applications. The maximum collector-base voltage stands at 120 volts, while the emitter-base voltage rating is capped at 5 volts, offering reliable operation within electrical limits.

The transistor functions efficiently within a temperature range from 0°C to 150°C, suitable for demanding industrial and automotive environments. With a transition frequency of up to 100 MHz, it supports high-frequency applications along with general purpose switching.

The compact physical dimensions of 1.6 mm height, 6.5 mm length, and 7 mm width make it suitable for densely packed circuit boards. The component also adheres to the AEC-Q101 automotive standard, making it a dependable choice for automotive electronics requiring high reliability.

This product is ideal for industrial, automotive, and manufacturing applications where dependable transistor switching and amplification are critical. It facilitates efficient control and power management in various electronic devices.

This transistor supports a maximum DC collector current of 3 amperes. It is designed with a maximum collector-emitter voltage rating of 100 volts. The device features a PNP transistor polarity and single transistor configuration.

The package type is SOT-223 (SC-73) suitable for surface mount technology. The transistor's maximum power dissipation is 5 watts for reliable operation. The maximum collector-base voltage is rated at 120 volts, providing enhanced durability.

Minimum DC current gain (hFE) of 15 ensures efficient amplification. The maximum emitter-base voltage is 5 volts. Operating temperature ranges from 0°C to a maximum of 150°C. The device exhibits a maximum transition frequency of 100 MHz for high-speed applications.

Compact dimensions with a height of 1.6 mm, length of 6.5 mm, and width of 7 mm. Meets automotive standard AEC-Q101 for quality assurance in automotive applications. For more electronic components and transistors meeting diverse industrial standards, explore the Infineon brand collection and the Bipolar Transistors category on EnvMart.