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Infineon N-Channel IGBT, 40 A, 650 V, 3-Pin TO-247 Through Hole Package IKW40N65H5FKSA1

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Infineon N-Channel IGBT, 40 A, 650 V, 3-Pin TO-247 Through Hole Package IKW40N65H5FKSA1

Name: Infineon N-Channel IGBT, 40 A, 650 V, 3-Pin TO-247 Through Hole Package IKW40N65H5FKSA1
Brand: Infineon
SKU: 138879
Price: 3.27 USD
Availability: InStock

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Category IGBT Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IKW40N65H5FKSA1
Mount Type	Through Hole
Series	High Speed Fifth Generation
Energy Rating	0.51mJ
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-40°C
Standards/Approvals	JEDEC, RoHS
Pin Count	3
Maximum Continuous Collector Current Ic	40A
Maximum Collector Emitter Voltage Vceo	650V
Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
Channel Type	N
Maximum Power Dissipation Pd	250W
Maximum Gate Emitter Voltage VGEO	±20 V

Key Features

Supports continuous collector current of 40 amperes for heavy load conditions.
Features a maximum collector-emitter voltage rating of 650 volts suitable for high voltage switching.
Comes in a durable TO-247 package ideal for through-hole mounting.
Equipped to operate in a wide temperature range from -40°C up to 175°C.
Low saturation voltage (2.1 V Vce(sat)) for improved conduction efficiency.
Maximum power dissipation of 250 watts ensures reliable performance under usage.
Gate-emitter voltage tolerance of ±20 V protects the device from voltage spikes.
Energy rating of 0.51 mJ allows fast switching with resilience.

Product Description

The Infineon IKW40N65H5FKSA1 is a high-speed fifth generation N-channel insulated gate bipolar transistor (IGBT) designed for demanding industrial switching applications. It features a maximum continuous collector current of 40 A and a collector-emitter voltage rating of 650 V ensuring excellent handling of heavy electrical loads.

Constructed in a TO-247 through-hole package with 3 pins, this device facilitates easy PCB mounting and reliable heat dissipation for robust operation. Its low saturation voltage of 2.1 V enhances conduction efficiency, leading to reduced power losses.

Engineered to operate in extreme thermal environments, the IKW40N65H5FKSA1 withstands temperatures from -40°C to 175°C, making it suitable for a wide range of industrial settings including cold storage units and hot enclosures.

The device meets JEDEC recognition and RoHS certification standards, ensuring industry-compliant design and environmentally conscious manufacturing materials.

With an energy rating of 0.51 mJ, this IGBT supports fast switching applications, enhancing performance in inverter modules for industrial motor control, high-voltage power supplies, and converters. It is also apt for power stages in welding and induction heating.

Continuous collector current rating of 40 A allows handling of substantial electrical loads. High collector-emitter voltage rating of 650 V provides robust voltage blocking capability. Low collector-emitter saturation voltage improves overall device efficiency.

Thermal endurance from -40°C to 175°C for diverse industrial environments. Compliant with JEDEC and RoHS industry standards. Fast switching energy rating suitable for high-speed power control applications. TO-247 package with through-hole mounting simplifies assembly and cooling solutions.

This IGBT is ideal for designers and engineers seeking a reliable, high-performance switching component for industrial electronics, power conversion, motor drives, and laboratory prototypes.

Explore EnvMart's broad selection of advanced semiconductor components to power your industrial projects with quality and reliability.