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onsemi Type P-Channel IGBT 75 A 650 V 4-Pin TO-247 Through Hole FGH75T65SQDNL4

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onsemi Type P-Channel IGBT 75 A 650 V 4-Pin TO-247 Through Hole FGH75T65SQDNL4

Name: onsemi Type P-Channel IGBT 75 A 650 V 4-Pin TO-247 Through Hole FGH75T65SQDNL4
Brand: onsemi
SKU: 155282
Price: 8.42 USD
Availability: InStock

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Category IGBT Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Model	FGH75T65SQDNL4
Mount Type	Through Hole
Series	Field Stop IV
Energy Rating	160mJ
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Standards/Approvals	Pb-Free, Halide Free
Pin Count	4
Maximum Continuous Collector Current Ic	75A
Maximum Collector Emitter Voltage Vceo	650V
Maximum Collector Emitter Saturation Voltage VceSAT	1.43V
Channel Type	Type P
Maximum Power Dissipation Pd	375W
Maximum Gate Emitter Voltage VGEO	20 V

Key Features

Maximum continuous collector current of 75 A ensuring high current capacity.
Maximum collector-emitter voltage rating of 650 V for robust voltage endurance.
Equipped with 4-pin TO-247 through-hole package for secure mounting.
Low collector-emitter saturation voltage of 1.43 V for reduced conduction losses.
Supports operating temperature range from -55°C to 175°C for versatility.
Incorporates Field Stop IV trench technology for enhanced efficiency.
Includes co-packaged fast free-wheeling diode with low forward voltage.
Pb-Free and Halide-Free compliant for environmental safety.

Product Description

onsemi FGH75T65SQDNL4 is a type P-Channel Insulated Gate Bipolar Transistor (IGBT) designed to handle a maximum continuous collector current of 75 A and a collector-emitter voltage of 650 V. Packaged in a TO-247-4L through-hole configuration, this device offers reliable operation in high power switching scenarios with a maximum power dissipation rating of 375 W.

Featuring Field Stop IV trench technology, the transistor achieves enhanced switching efficiency through reduced on-state voltage and lower switching losses. The separate emitter drive pin and the co-packaged, soft, and fast free-wheeling diode with a low forward voltage further improve switching performance, making it ideal for industrial power conversion applications.

Operating temperature ranges from -55°C to a maximum of 175°C, making this component suitable for demanding environments. It complies with environmental standards being Pb-Free and Halide-Free. With an energy rating of 160 mJ, it supports robust transient conditions common in uninterruptible power supplies and solar inverters.

The 4-pin TO-247 package provides a sturdy through-hole mounting suitable for high-power circuits, ensuring thermal stability and durability.

Ideal applications include industrial power supplies, inverter technology for solar power systems, uninterruptible power supply (UPS) units, and other demanding power electronics requiring fast switching and high current handling capability.

Maximum continuous collector current of 75 A ensuring high current capacity. Maximum collector-emitter voltage rating of 650 V for robust voltage endurance. Equipped with 4-pin TO-247 through-hole package for secure mounting.

Low collector-emitter saturation voltage of 1.43 V for reduced conduction losses. Supports operating temperature range from -55°C to 175°C for versatility. Incorporates Field Stop IV trench technology for enhanced efficiency.

Includes co-packaged fast free-wheeling diode with low forward voltage. Pb-Free and Halide-Free compliant for environmental safety. Optimized for applications such as UPS and solar inverters. Energy rating of 160 mJ suitable for demanding industrial environments.

Explore the extensive range of semiconductor components at EnvMart for reliable and efficient power management solutions.