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DiodesZetex P-Channel MOSFET 12 A, 30 V Enhancement Mode, 8-Pin SOIC DMG4413LSS-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMG4413LSS-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | DMG |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 10.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.2W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Type P channel designed for enhancement mode operation.
- Maximum continuous drain current of 12 amperes ensures robust performance.
- Compact surface-mount SOIC package with 8 pins for easy PCB integration.
- Maximum drain-source voltage rating of 30 volts suitable for low to medium voltage applications.
- Maximum power dissipation of 2.2 watts supports efficient operation under load.
- Low maximum drain-source resistance of 10.2 milliohms improves conduction efficiency.
- Wide operating temperature range from -55°C to 150°C for demanding environments.
- Typical gate charge of 46 nanocoulombs reduces switching losses and enhances speed.
Product Description
DiodesZetex DMG4413LSS-13 is a P-Channel MOSFET transistor designed for enhancement mode operation with a maximum continuous drain current of 12 amperes and a maximum drain-source voltage rating of 30 volts.
Its surface-mount SOIC 8-pin package offers easy installation on printed circuit boards, suitable for compact electronic devices and power management circuits. The device features a low drain-source resistance of 10.2 milliohms and maximum power dissipation of 2.2 watts, delivering efficient current conduction with minimal thermal loss.
This MOSFET operates reliably across a wide temperature range from -55°C to 150°C, making it well-suited for industrial, automotive, and commercial electronics applications where ambient and operational temperature vary significantly.
It complies with the automotive standard AEC-Q101 and is manufactured in China, signifying its quality for demanding automotive and industrial environments. Type P channel designed for enhancement mode operation. Maximum continuous drain current of 12 amperes ensures robust performance.
Compact surface-mount SOIC package with 8 pins for easy PCB integration. Maximum drain-source voltage rating of 30 volts suitable for low to medium voltage applications. Maximum power dissipation of 2.2 watts supports efficient operation under load.
Low maximum drain-source resistance of 10.2 milliohms improves conduction efficiency. Wide operating temperature range from -55°C to 150°C for demanding environments. Typical gate charge of 46 nanocoulombs reduces switching losses and enhances speed.
This P-Channel MOSFET is widely used in power supply circuits, voltage regulators, load switches, and signal amplification in industrial controls, automotive electronics, and consumer devices. Its robust specifications and automotive compliance make it a preferred choice for high-reliability electronics design.
Explore more semiconductor devices and MOSFET options in the Electronics & Electricals category on EnvMart for your industrial and commercial electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 amperes.
This P-Channel MOSFET has a maximum drain-source voltage rating of 30 volts.
It comes in a compact surface-mount SOIC package with 8 pins.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation for this MOSFET is 2.2 watts.
The typical gate charge is 46 nanocoulombs.
It has a maximum drain-source resistance of 10.2 milliohms.
This model complies with the automotive standard AEC-Q101.
The dimensions are 4.95mm in length, 3.95mm in width, and 1.5mm in height.
It features a P-channel designed for enhancement mode operation.
This MOSFET is suitable for power supply circuits, voltage regulators, load switches, and signal amplification in various electronic applications.
The forward voltage drop is -1.2 volts.
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