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DiodesZetex Silicon Junction Switching Diode Single 300 mA 75 V SOT-23 3-Pin BAS16-7-F

Category Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BAS16-7-F
Width 2.5mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Power Dissipation Pd 350mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 1A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 75V

Key Features

  • Maximum forward current of 300 mA ensures suitability for low power circuits.
  • Surface mountable SOT-23 package with 3 pins for compact PCB designs.
  • Peak reverse voltage rating of 75 V for robust switching capability.
  • Maximum power dissipation up to 350 mW supports safe operation under load.
  • Fast peak reverse recovery time of 4 ns reduces switching losses.
  • Wide operating temperature range from -65°C to 150°C for harsh environments.
  • Maximum forward voltage of 1.25 V for efficient conduction.
  • Peak non-repetitive forward surge current of 1 A for transient protection.

Product Description

The DiodesZetex BAS16-7-F is a silicon junction switching diode designed for use in electronic circuits requiring small signal switching capabilities. This single diode device is packaged in a compact SOT-23 surface mount package with three pins, facilitating easy integration on printed circuit boards.

It supports a maximum forward current of 300 mA and a peak reverse repetitive voltage of 75 V, making it suitable for moderate voltage switching applications. With a maximum power dissipation of 350 mW and a peak reverse recovery time of 4 nanoseconds, the diode ensures efficient switching performance and low energy loss.

The device operates reliably across a broad temperature range from -65°C to 150°C, suitable for industrial and commercial environments. Maximum forward current of 300 mA for consistent circuit operation. Surface mount SOT-23 package with 3 pins for compact design.

Maximum peak reverse voltage of 75 V suitable for switching applications. Power dissipation rating of 350 mW supports typical load conditions. Fast reverse recovery time of 4 ns reduces switching delay. Operating temperature range extends from -65°C up to 150°C.

Forward voltage threshold of 1.25 V ensures low power loss. Small physical size (3 mm × 2.5 mm × 1.1 mm) ideal for space-saving designs. Handles surge currents up to 1 A for transient events.

This diode is commonly used in industrial electronics, telecommunications, power management, and data communication equipment. Its surface mount format allows automated assembly and efficient use in dense electronic systems.

With a country of origin specified as China, the BAS16-7-F diode adheres to robust manufacturing standards. Explore more semiconductors and discrete components in the Diodes category at EnvMart for your electronic design and manufacturing needs.

DiodesZetex Silicon Junction Switching Diode Single 300 mA 75 V SOT-23 3-Pin BAS16-7-F
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Frequently Asked Questions

The maximum forward current for this diode is 300 mA, making it suitable for low power circuits.

The BAS16-7-F has a peak reverse repetitive voltage rating of 75 V, which supports robust switching capabilities.

It has a maximum power dissipation of 350 mW, which supports safe operation under typical load conditions.

This model is packaged in a compact SOT-23 surface mount package with three pins, facilitating easy integration on PCBs.

The diode operates reliably across a wide temperature range from -65°C to 150°C, suitable for harsh environments.

The maximum forward voltage for this diode is 1.25 V, ensuring efficient conduction with low power loss.

It features a fast peak reverse recovery time of 4 ns, which helps reduce switching losses.

The BAS16-7-F can handle a peak non-repetitive forward surge current of 1 A, providing transient protection.

The dimensions of this model are 3 mm in length, 2.5 mm in width, and 1.1 mm in height, making it suitable for space-saving designs.

This diode is configured as a single diode, designed for small signal switching applications.

It is commonly used in industrial electronics, telecommunications, power management, and data communication equipment.

The BAS16-7-F is manufactured in China, adhering to robust manufacturing standards.

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