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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 47.8mm |
| Length | 20.3mm |
| Model | MJL21193G |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | MJL21193 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-264 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -250V |
| Minimum DC Current Gain hFE | 8 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 400V dc |
| Maximum Power Dissipation Pd | 200W |
| Maximum DC Collector Current Idc | -16A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi MJL21193G is a high-power PNP transistor housed in a TO-264 3-pin package. It is engineered to handle collector currents up to 16 A and collector-emitter voltages reaching 250 V, making it suitable for power amplification and switching tasks. Its robust maximum power dissipation of 200 W allows it to operate efficiently in demanding electrical circuits.
The transistor’s through-hole mount provides mechanical stability and ease of installation on printed circuit boards (PCBs). The device features a single transistor configuration with a PNP polarity, optimized for various industrial and commercial electronic applications.
Key electrical characteristics include a maximum collector-base voltage of 400 V dc, a minimum DC current gain of 8, and a maximum emitter-base voltage of 5 V. With an operational temperature range spanning from -65°C to 150°C, it is well-suited for environments with extreme temperature variations.
This transistor’s transition frequency of 1 MHz supports moderately high-frequency applications, enhancing its versatility for power control and amplification in industrial, laboratory, and electronics manufacturing settings.
Physical dimensions of 47.8 mm height, 20.3 mm length, and 5.3 mm width allow for integration into compact assemblies and systems. Supports maximum DC collector current of 16 A. Rated for maximum collector-emitter voltage of 250 V.
Mount type is through-hole facilitating easy PCB installation. Maximum power dissipation of 200 W ensures high power handling capability. PNP polarity with single transistor configuration for versatile use. Wide temperature range suitable for harsh industrial applications.
Transition frequency up to 1 MHz for efficient switching. Compact dimensions for versatile mounting options.
This onsemi transistor is ideal for use in power management, industrial automation, electronic assembly, and electrical engineering fields. Explore more power transistor models at EnvMart to find suitable solutions for your electronics and power control needs.
Explore more products in our Power Transistors category.
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