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onsemi PNP Power Transistor 16 A, 250 V, TO-264 Package, 3-Pin MJL21193G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 47.8mm
Length 20.3mm
Model MJL21193G
Width 5.3mm
Mount Type Through Hole
Series MJL21193
Maximum Operating Temperature 150°C
Package Type TO-264
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -250V
Minimum DC Current Gain hFE 8
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 400V dc
Maximum Power Dissipation Pd 200W
Maximum DC Collector Current Idc -16A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Supports maximum DC collector current of 16 A.
  • Rated for maximum collector-emitter voltage of 250 V.
  • Mount type is through-hole facilitating easy PCB installation.
  • Maximum power dissipation is 200 W ensuring high power handling capability.
  • Designed with PNP transistor polarity and single transistor configuration.
  • Maximum collector-base voltage is 400 V dc for robust switching.
  • Minimum DC current gain (hFE) of 8 enables reliable amplification.
  • Operational temperature range from -65°C to 150°C suitable for diverse environments.

Product Description

onsemi MJL21193G is a high-power PNP transistor housed in a TO-264 3-pin package. It is engineered to handle collector currents up to 16 A and collector-emitter voltages reaching 250 V, making it suitable for power amplification and switching tasks. Its robust maximum power dissipation of 200 W allows it to operate efficiently in demanding electrical circuits.

The transistor’s through-hole mount provides mechanical stability and ease of installation on printed circuit boards (PCBs). The device features a single transistor configuration with a PNP polarity, optimized for various industrial and commercial electronic applications.

Key electrical characteristics include a maximum collector-base voltage of 400 V dc, a minimum DC current gain of 8, and a maximum emitter-base voltage of 5 V. With an operational temperature range spanning from -65°C to 150°C, it is well-suited for environments with extreme temperature variations.

This transistor’s transition frequency of 1 MHz supports moderately high-frequency applications, enhancing its versatility for power control and amplification in industrial, laboratory, and electronics manufacturing settings.

Physical dimensions of 47.8 mm height, 20.3 mm length, and 5.3 mm width allow for integration into compact assemblies and systems. Supports maximum DC collector current of 16 A. Rated for maximum collector-emitter voltage of 250 V.

Mount type is through-hole facilitating easy PCB installation. Maximum power dissipation of 200 W ensures high power handling capability. PNP polarity with single transistor configuration for versatile use. Wide temperature range suitable for harsh industrial applications.

Transition frequency up to 1 MHz for efficient switching. Compact dimensions for versatile mounting options.

This onsemi transistor is ideal for use in power management, industrial automation, electronic assembly, and electrical engineering fields. Explore more power transistor models at EnvMart to find suitable solutions for your electronics and power control needs.

Explore more products in our Power Transistors category.

onsemi PNP Power Transistor 16 A, 250 V, TO-264 Package, 3-Pin MJL21193G
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Frequently Asked Questions

The maximum DC collector current for this model is 16 A.

It is rated for a maximum collector-emitter voltage of 250 V.

The maximum power dissipation is 200 W, allowing for high power handling capability.

This model operates within a temperature range of -65°C to 150°C.

It features a through-hole mount type, facilitating easy installation on PCBs.

The maximum transition frequency is 1 MHz, suitable for moderately high-frequency applications.

The dimensions are 47.8 mm in height, 20.3 mm in length, and 5.3 mm in width.

The minimum DC current gain (hFE) is 8, which enables reliable amplification.

The maximum collector-base voltage is 400 V dc.

It is designed for power amplification and switching tasks in industrial and commercial electronic applications.

This transistor features a single transistor configuration with PNP polarity.

The maximum emitter-base voltage (VEBO) is 5 V.

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