$2.60
$2.52
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi MOSFET Type N-Channel 376 A 60 V Enhancement 8-Pin PQFN NTMTS001N06C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.15mm |
| Length | 8.1mm |
| Model | NTMTS001N06C |
| Width | 8mm |
| Mount Type | Surface |
| Series | NTMTS001N06C |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 376A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 910μΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 244W |
| Typical Gate Charge Qg @ Vgs | 113nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This device features a low maximum drain source resistance of 910 micro ohms to reduce conduction losses.
- The enhancement mode channel provides efficient switching at 244 W maximum power dissipation.
- Designed for surface mount with a small 8.1 mm by 8.0 mm footprint and 1.15 mm height.
- Operates reliably within a temperature range from -55°C to 175°C.
- Typical gate charge is 113 nC at Vgs, enabling low driver losses and fast switching.
- Maximum gate source voltage rating is 20 V, ensuring safe operation within design limits.
- The device is halogen-free, Pb-free, and RoHS compliant for environmentally responsible use.
- Typical forward voltage is 1.2 V, suited for power tools, battery operated vacuums, UAV/drones, material handling, BMS/storage, and home automation.
Product Description
onsemi NTMTS001N06C is a high-performance Type N-Channel MOSFET designed for industrial and electronic applications requiring high continuous drain current and low conduction losses. This 8-pin PQFN package device supports a maximum continuous drain current (Id) of 376 A and a drain-source voltage (Vds) of 60 V, providing robust power handling capabilities.
With a maximum drain source resistance (Rds(on)) of 910 micro ohms and power dissipation capacity of up to 244 W, the MOSFET ensures efficient power conversion and minimal energy loss in switching circuits. Its enhancement mode operation and a typical gate charge (Qg) of 113 nC facilitate fast and reliable switching, making it suitable for demanding applications.
The compact footprint (8.1 mm length x 8 mm width x 1.15 mm height) supports surface mount technology, allowing integration into space-constrained PCB layouts. Operating temperatures from -55°C to 175°C ensure stable performance across harsh and varying environmental conditions.
This MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring compliance with modern environmental and safety standards. Typical applications encompass power tools, battery-operated vacuum cleaner systems, unmanned aerial vehicles (UAVs) and drones, material handling equipment, battery management systems (BMS) and storage solutions, as well as home automation devices.
This device features a low maximum drain source resistance of 910 micro ohms to reduce conduction losses. The enhancement mode channel provides efficient switching at 244 W maximum power dissipation. Designed for surface mount with a small 8.1 mm by 8.0 mm footprint and 1.15 mm height.
Operates reliably within a temperature range from -55°C to 175°C. Typical gate charge is 113 nC at Vgs, enabling low driver losses and fast switching. Maximum gate source voltage rating is 20 V, ensuring safe operation within design limits.
The device is halogen-free, Pb-free, and RoHS compliant for environmentally responsible use. Typical forward voltage is 1.2 V, suited for power tools, battery operated vacuums, UAV/drones, material handling, BMS/storage, and home automation.
Explore more onsemichannel MOSFETs and electronic components at EnvMart for your industrial, laboratory, and manufacturing needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current (Id) for this model is 376 A.
This unit has a maximum drain-source voltage (Vds) rating of 60 V.
The maximum power dissipation capacity of this MOSFET is 244 W.
The dimensions of the PQFN package are 8.1 mm in length, 8 mm in width, and 1.15 mm in height.
The typical gate charge (Qg) at Vgs is 113 nC.
The maximum gate-source voltage (Vgs) rating for this model is 20 V.
The maximum drain-source resistance (Rds(on)) is 910 micro ohms.
It operates reliably within a temperature range from -55°C to 175°C.
Yes, it is halogen-free, Pb-free, and RoHS compliant, ensuring environmentally responsible use.
This model is suited for applications such as power tools, battery-operated vacuums, UAVs/drones, material handling, and home automation.
This device features an enhancement mode N-channel design.
The typical forward voltage (Vf) is 1.2 V.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$6.86
$6.66
-3%
New
$0.97
$0.94
-3%
New
$0.06
$0.06
-3%
New
Recently Viewed Products
$2.60
$2.52
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent