DiodesZetex Type N-Channel MOSFET 500 mA 60 V Enhancement Mode 3-Pin SOT-23 MMBF170-7-F

DiodesZetex MMBF170-7-F is a high-quality N-Channel MOSFET designed for switching and amplification applications in electronic circuits. This device is packaged in a compact 3-pin SOT-23 surface mount package that facilitates efficient PCB layout in space-constrained designs.

Featuring enhancement mode operation, this MOSFET can reliably handle a maximum continuous drain current of 500 mA and a maximum drain source voltage of 60 V, making it suitable for low to medium power electronic applications. Its maximum power dissipation of 300 mW allows for stable operation without excessive heat generation.

The device offers a maximum drain source resistance (Rds) of 5.3 Ω, contributing to low conduction losses and enhanced circuit efficiency. With a forward voltage of 1.25 V and a maximum gate source voltage rating of 20 V, this MOSFET ensures robust gate control and long-term durability.

Operating temperature ranges from -55°C to 150°C enable use in environments with significant thermal variation, including industrial and automotive settings. The device's compliance with the automotive standard AEC-Q100 further attests to its reliability and quality for automotive electronics.

Its physical dimensions - 1.1 mm height, 1.4 mm width, and 3 mm length - allow for easy integration in compact assemblies. Common applications include switching regulators, load switches, and amplification stages in industrial, automotive, and consumer electronics.

This MOSFET is designed with enhancement mode operation for efficient switching performance. Capable of handling a maximum continuous drain current of 500 mA. Maximum drain source voltage is rated at 60 V, suitable for low power applications.

Equipped with a compact SOT-23 surface mount package with 3 pins for easy PCB integration. The device operates within a wide temperature range from -55°C to 150°C, ensuring reliability in harsh environments. Maximum power dissipation of 300 mW supports moderate power requirements.

Low maximum drain source resistance of 5.3 Ω improves energy efficiency. Has a maximum gate source voltage rating of 20 V to protect gate integrity. Features the automotive standard AEC-Q100 certification, ensuring automotive-grade quality.

Device dimensions: Height 1.1 mm, Width 1.4 mm, Length 3 mm, ideal for compact electronics.

This DiodesZetex MOSFET is suitable for a wide range of industrial, automotive, manufacturing, and consumer electronics uses, providing reliable performance in demanding environments.

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