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onsemi Digital Transistor PNP SOT-23 3-Pin, -50 V, 225 mW MMUN2113LT3G

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onsemi Digital Transistor PNP SOT-23 3-Pin, -50 V, 225 mW MMUN2113LT3G

Name: onsemi Digital Transistor PNP SOT-23 3-Pin, -50 V, 225 mW MMUN2113LT3G
Brand: onsemi
SKU: 101859
Price: 0.04 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.9mm
Length	1.65mm
Model	MMUN2113LT3G
Width	0.9mm
Mount Type	Surface
Series	MMUN2113
Maximum Operating Temperature	150°C
Package Type	SOT-23
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-50V
Minimum DC Current Gain hFE	80
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-5V
Maximum Collector Base Voltage VCBO	50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	225mW
Transistor Configuration	Single

Key Features

Maximum collector emitter voltage of -50 V ensures robust operation.
Rated for maximum power dissipation of 225 milliwatts for efficiency.
Transistor configuration is single for straightforward usage.
Minimum DC current gain (hFE) of 80 enhances switch performance.
Maximum operating temperature up to 150 degrees Celsius for reliability.
Compact dimensions of 1.65 mm length, 0.9 mm width, and 0.9 mm height.
Pin count of 3 compatible with standard PCB layouts.
Automotive qualified to AEC-Q101 ensuring quality standards.

Product Description

onsemi MMUN2113LT3G is a high-quality PNP digital transistor in a compact SOT-23 3-pin surface mount package designed for use in semiconductor and electronic circuits. It features a maximum collector emitter voltage of -50 volts and a maximum power dissipation capability of 225 milliwatts, making it suitable for low power switching and amplification tasks.

This transistor is designed with integrated dual resistors, allowing it to be driven directly from digital sources without the need for additional external components. It offers a single transistor configuration with a minimum DC current gain (hFE) value of 80, supporting efficient signal amplification.

With a maximum operating temperature rating of 150°C, this component ensures reliable performance under harsh thermal conditions encountered in industrial, automotive, and consumer electronic applications. Its surface mount device (SMD) form factor allows for streamlined manufacturing processes and reduced PCB real estate usage.

Measuring only 1.65 mm in length, 0.9 mm in width, and 0.9 mm in height, the MMUN2113LT3G’s compact size supports miniaturization trends in advanced circuit designs. It complies with the automotive AEC-Q101 standard, assuring robust operation in automotive environments.

Maximum collector emitter voltage: -50 V. Maximum power dissipation: 225 mW. Single PNP transistor configuration. Minimum DC current gain (hFE): 80. Maximum operating temperature: 150°C. Package type: SOT-23 surface mount.

Pin count: 3. Automotive qualified AEC-Q101 standard. Integrated dual resistors for direct digital drive. Compact dimensions suitable for SMT applications.

This digital transistor is ideal for applications in automotive electronics, industrial control systems, and general-purpose amplification circuits. Its design supports direct interface with digital logic signals, simplifying circuit design and improving reliability.

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