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onsemi Digital Transistor 115 V 40W NPN Through Hole TO-220, 3-Pin BD241CG
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 9.28mm |
| Length | 10.53mm |
| Model | BD241CG |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | BD241C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 115V |
| Minimum DC Current Gain hFE | 2.5 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Power Dissipation Pd | 40W |
| Transistor Configuration | Single |
Key Features
- Max collector emitter voltage of 115 V supports high voltage applications.
- Power dissipation rating of 40 W ensures reliability under load.
- Low minimum DC current gain of 2.5 suitable for general purpose amplification.
- Maximum operating temperature up to 150°C allows use in harsh environments.
- Compact dimensions with length 10.53 mm, height 9.28 mm, and width 4.83 mm.
- Transistor polarity is NPN with single transistor configuration.
- Mount type is through hole for PCB installations.
- Emitter base voltage rating of 5 V dc ensures device stability.
Product Description
onsemi BD241CG is a digital transistor with a maximum collector emitter voltage of 115 V and a maximum power dissipation of 40 W. Packaged in a TO-220 through hole form factor, it features a single NPN transistor configuration and three pins. This transistor is commonly used in general purpose amplifier and switching applications in industrial, electronic, and power electronics fields.
The transistor offers a minimum DC current gain (hFE) of 2.5 and a maximum emitter base voltage (VEBO) of 5 V dc. It operates reliably up to 150°C operating temperature, supporting demanding environments. Its compact physical dimensions - 10.53 mm length, 9.28 mm height, and 4.83 mm width - make it suitable for dense PCB layouts where space is a premium.
This device is designed for through hole mounting and is part of the BD241C series. It withstands high voltages and dissipates significant power, making it applicable in power amplification circuits and power switching devices.
Key features include its robust construction, three-pin interface, and suitability for a wide range of electronic equipment for amplification and switching. The transistor's performance and package type allow integration in automotive electronics, industrial machines, and consumer electronics requiring reliable bipolar transistors.
Max voltage 115 V collector-emitter. Power dissipation rating of 40 W. NPN transistor polarity, single configuration. Minimum DC gain of 2.5. Operating temperature up to 150°C. Compact TO-220 package, through hole mount.
3 pins for electrical connection. Emitter base voltage max 5 V dc. Dimensions: 10.53 × 9.28 × 4.83 mm. Manufactured in China.
This transistor is an ideal choice for designers and engineers in electronic manufacturing and repair, offering reliable switching and amplification in power electronics circuits. Explore similar Bipolar Transistors in the Electronics & Electricals category at EnvMart to find complementary components for your projects.
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Frequently Asked Questions
The maximum collector-emitter voltage of this model is 115 V, making it suitable for high voltage applications.
It has a power dissipation rating of 40 W, ensuring reliability under load conditions.
The minimum DC current gain (hFE) for this transistor is 2.5, which is appropriate for general purpose amplification.
The maximum operating temperature is up to 150°C, allowing it to function in harsh environments.
This transistor has compact dimensions of 10.53 mm in length, 9.28 mm in height, and 4.83 mm in width.
It is designed for through hole mounting, suitable for PCB installations.
This model features a single NPN transistor configuration, making it versatile for various applications.
The maximum emitter base voltage (VEBO) rating is 5 V dc, ensuring device stability during operation.
This transistor has a pin count of 3, facilitating easy electrical connections.
It is commonly used in general purpose amplifier and switching applications in industrial and electronic fields.
This model is part of the BD241C series, which includes other similar bipolar transistors.
The transistor is manufactured in China, reflecting its origin in the electronics industry.
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