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onsemi MOSFET Type N Channel 0.5 A 60 V 3-Pin TO-92 Package BS170

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 5.2mm
Length 4.32mm
Model BS170
Width 3.18mm
Mount Type Through Hole
Series BS170
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Number of Elements per Chip 1
Channel Type Type N
Maximum Continuous Drain Current Id 0.5A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 5Ω
Maximum Power Dissipation Pd 350mW

Key Features

  • Small signal N-channel MOSFET with 0.5 A maximum continuous drain current.
  • Rated for 60 V maximum drain-source voltage.
  • Compact TO-92 through-hole package with 3 pins for easy PCB mounting.
  • Maximum power dissipation of 350 mW ensures reliable operation under moderate loads.
  • Operates reliably across a wide temperature range from -55°C to 150°C.
  • Low maximum drain-source resistance of 5 Ω for efficient switching performance.
  • Single element per chip design ideal for discrete semiconductor applications.
  • Suitable for general usage in electronics, prototyping, and signal processing circuits.

Product Description

onsemi BS170 MOSFET Type N Channel 0.5 A 60 V 3-Pin TO-92 Package is a small signal transistor widely used in electronic circuits requiring low voltage switching and amplification. It supports a maximum continuous drain current of 500 mA and a drain-source voltage rating of 60 V, making it suitable for many general purpose applications with moderate power requirements.

The TO-92 package ensures easy mounting on standard through-hole PCBs with three pins allowing straightforward integration. This MOSFET provides reliable performance over a broad temperature range from -55°C to 150°C, which is ideal for industrial, laboratory, and automotive prototype usage where temperature variations occur.

Featuring a maximum power dissipation of 350 mW and a low maximum drain-source resistance of 5 Ω, it offers efficient switching and minimal losses in low power circuits. Its single-element chip design aids in clean signal control and discrete semiconductor uses.

This device is well suited for diverse electronics applications including signal switching, amplification, and power management within embedded and experimental setups. Its compact dimensions of 4.32 mm length, 5.2 mm height, and 3.18 mm width make it compatible with dense PCB layouts.

Small signal transistor with 0.5 A drain current capacity. 3-pin TO-92 through-hole package for easy mounting. Low drain-source resistance enhances efficiency. Stable operation over wide temperature range (-55°C to 150°C).

Compact size fits versatile PCB applications. Suitable for general electronics, automotive prototyping, and laboratory use. Explore our Semiconductor category for more on MOSFETs and discrete electronic components at EnvMart.

onsemi MOSFET Type N Channel 0.5 A 60 V 3-Pin TO-92 Package BS170
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Frequently Asked Questions

The maximum continuous drain current for the BS170 MOSFET is 0.5 A.

This model is rated for a maximum drain-source voltage of 60 V.

The BS170 MOSFET comes in a TO-92 package type, which is suitable for through-hole mounting.

The maximum power dissipation of the BS170 MOSFET is 350 mW.

The BS170 operates reliably over a wide temperature range from -55°C to 150°C.

The maximum drain-source resistance for the BS170 is 5 Ω.

The BS170 MOSFET has 3 pins for easy PCB mounting.

The dimensions of the BS170 MOSFET are 4.32 mm in length, 5.2 mm in height, and 3.18 mm in width.

The BS170 features an N-channel type.

This model is suitable for general electronics applications, including signal switching, amplification, and power management.

The BS170 MOSFET has a single element per chip design.

The BS170 MOSFET is manufactured in India.

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