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Infineon HEXFET Type N-Channel MOSFET 78 A 150 V Enhancement Mode 3-Pin TO-247 IRFP4321PBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 20.3mm
Length 15.9mm
Model IRFP4321PBF
Width 5.3mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 78A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 16mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 310W
Typical Gate Charge Qg @ Vgs 71nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.3V

Key Features

  • This MOSFET operates in enhancement mode for efficient switching performance.
  • It features a low drain-source resistance of 16 milliohms for reduced conduction losses.
  • The device supports a maximum power dissipation of 310 W for high power applications.
  • Operating temperature ranges from -55°C to 175°C ensuring wide environmental tolerance.
  • It has a typical gate charge of 71 nC at gate-source voltage enhancing switching speed.
  • Designed for through-hole mounting with rugged TO-247 packaging.
  • Maximum gate-source voltage rating of 30 V for robust gate drive capability.
  • The MOSFET provides forward voltage of 1.3 V for efficient current conduction.

Product Description

Infineon IRFP4321PBF HEXFET Type N-Channel MOSFET is engineered for industrial and commercial electronic applications requiring efficient power switching and motor control.

The device supports a maximum continuous drain current of 78 A and a drain-source voltage rating of 150 V, making it suitable for high-power circuits and synchronous rectifier setups.

Its rugged TO-247 through-hole package ensures excellent thermal performance and reliability in demanding environments ranging from -55°C up to 175°C operating temperature.

The MOSFET's low drain-source resistance of 16 milliohms reduces power loss and heat generation, boosting overall energy efficiency in power supplies, motor control modules, and AC-DC synchronous rectifiers.

Featuring a typical gate charge of 71 nC and a maximum gate-source voltage of 30 V, this component enables fast switching and robust gate control in designs. Its compact physical dimensions of 20.3 mm height, 15.9 mm length, and 5.3 mm width allow for efficient PCB layouts while providing through-hole stability.

This MOSFET operates in enhancement mode for superior switching efficiency. Low on-resistance optimizes conduction performance. High power dissipation capacity supports demanding industrial applications. Wide ambient temperature range for tough operational conditions.

Compact TO-247 packaging ensures mechanical durability. Suitable for motor control and synchronous rectifier circuits. Ensures reduced energy losses for power management systems. Reliable performance in power electronics and semiconductor assemblies.

Easy integration into through-hole PCB designs.

Infineon's MOSFET portfolio provides trusted solutions for power switching, motor control, and efficient power supply design in diverse industrial, automotive, and commercial electrical applications.

Explore more product variants and detailed datasheets to optimize your electronic designs within the semiconductor category at EnvMart.

Infineon HEXFET Type N-Channel MOSFET 78 A 150 V Enhancement Mode 3-Pin TO-247 IRFP4321PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 78 A.

This MOSFET has a maximum drain-source voltage rating of 150 V.

It supports a maximum power dissipation of 310 W, making it suitable for high power applications.

The operating temperature range is from -55°C to 175°C.

The typical gate charge is 71 nC at gate-source voltage.

This model is designed for through-hole mounting.

The dimensions are 20.3 mm in height, 15.9 mm in length, and 5.3 mm in width.

The maximum gate-source voltage rating is 30 V.

The forward voltage is 1.3 V.

It features a low drain-source resistance of 16 milliohms.

This model is suitable for industrial and commercial electronic applications, including power switching and motor control.

It has a Type N channel, operating in enhancement mode.

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