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Infineon HEXFET Type N-Channel Power MOSFET 171 A, 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 20.7mm
Length 15.87mm
Model IRFP4568PBF
Width 5.31mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-247AC
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 171A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 5.9mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 684W
Typical Gate Charge Qg @ Vgs 151nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.3V

Key Features

  • Supports a maximum continuous drain current of 171 A for high-power applications.
  • Maximum drain-source voltage of 150 V with enhancement mode channel operation.
  • Low on-resistance of 5.9 mΩ minimizes conduction losses.
  • Maximum power dissipation capability of 684 W ensures reliable heat management.
  • Wide ambient operating temperature range from -55°C to 175°C facilitates use in harsh environments.
  • Typical gate charge of 151 nC optimizes switching efficiency.
  • Robust TO-247AC package supports effective thermal conduction and mounting.
  • Maximum gate-source voltage of ±30 V protects the gate against overvoltage conditions.

Product Description

Infineon IRFP4568PBF HEXFET Type N-Channel Power MOSFET is a robust semiconductor device designed specifically for high efficiency and high current applications. Featuring a maximum continuous drain current of 171 A and a maximum drain-source voltage of 150 V, this MOSFET is suitable for demanding power management and switching circuits. It employs enhancement mode operation and integrates a low on-resistance of 5.9 mΩ, significantly reducing power losses and heat generation during conduction.

The device is housed in a TO-247AC package with three pins, enabling easy through-hole mounting and efficient thermal dissipation. With a maximum power dissipation capability of 684 W, the IRFP4568PBF handles substantial thermal loads, making it ideal in applications requiring reliable heat management.

Operating reliably across an extensive temperature range from -55°C to +175°C, this MOSFET withstands harsh industrial and automotive environments. Its typical gate charge of 151 nC at a gate-to-source voltage of 10 V ensures fast switching speeds and efficient performance. Furthermore, it offers a maximum gate-source voltage rating of ±30 V, providing stable operation and protection against voltage spikes.

Infineon's HEXFET technology incorporated in this model enhances body diode recovery characteristics and ensures low switching losses. The forward voltage of 1.3 V further supports energy-efficient conduction, improving overall circuit performance.

Common applications include high-efficiency synchronous rectification, uninterruptible power supplies (UPS), motor control circuits, and hard-switched or high-frequency power switching. The single transistor configuration facilitates straightforward circuit integration for diverse system designs.

Supports high drain current and voltage ratings for power electronics. Enhanced reliability with improved body diode recovery characteristics. Efficient thermal management through TO-247AC package design. Wide temperature operational range ensures versatility in industrial environments.

Optimized gate threshold and charge for fast and efficient switching.

This product is suitable for industrial, automotive, telecom, and power supply applications requiring reliable and high-performance MOSFET transistors. EnvMart offers this Infineon IRFP4568PBF as part of its semiconductor and discrete component catalog for electronics manufacturing and repair professionals looking for proven quality and performance.

Infineon HEXFET Type N-Channel Power MOSFET 171 A, 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF
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Frequently Asked Questions

The maximum continuous drain current of this MOSFET is 171 A, making it suitable for high-power applications.

This model supports a maximum drain-source voltage of 150 V, which is essential for power management in various circuits.

The on-resistance of this MOSFET is 5.9 mΩ, which helps minimize conduction losses during operation.

It has a maximum power dissipation capability of 684 W, ensuring effective heat management during operation.

The typical gate charge at a gate-to-source voltage of 10 V is 151 nC, optimizing switching efficiency.

It operates reliably across a wide ambient temperature range from -55°C to 175°C, suitable for harsh environments.

This model is housed in a TO-247AC package, which supports through-hole mounting and effective thermal conduction.

The maximum gate-source voltage rating for this MOSFET is ±30 V, providing protection against overvoltage conditions.

The dimensions of this MOSFET are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.

It is suitable for applications such as high-efficiency synchronous rectification, uninterruptible power supplies (UPS), and motor control circuits.

This model features a Type N channel, which is characteristic of enhancement mode operation.

The forward voltage of this MOSFET is 1.3 V, which supports energy-efficient conduction in circuits.

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