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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP4568PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 171A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 5.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 684W |
| Typical Gate Charge Qg @ Vgs | 151nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.3V |
Infineon IRFP4568PBF HEXFET Type N-Channel Power MOSFET is a robust semiconductor device designed specifically for high efficiency and high current applications. Featuring a maximum continuous drain current of 171 A and a maximum drain-source voltage of 150 V, this MOSFET is suitable for demanding power management and switching circuits. It employs enhancement mode operation and integrates a low on-resistance of 5.9 mΩ, significantly reducing power losses and heat generation during conduction.
The device is housed in a TO-247AC package with three pins, enabling easy through-hole mounting and efficient thermal dissipation. With a maximum power dissipation capability of 684 W, the IRFP4568PBF handles substantial thermal loads, making it ideal in applications requiring reliable heat management.
Operating reliably across an extensive temperature range from -55°C to +175°C, this MOSFET withstands harsh industrial and automotive environments. Its typical gate charge of 151 nC at a gate-to-source voltage of 10 V ensures fast switching speeds and efficient performance. Furthermore, it offers a maximum gate-source voltage rating of ±30 V, providing stable operation and protection against voltage spikes.
Infineon's HEXFET technology incorporated in this model enhances body diode recovery characteristics and ensures low switching losses. The forward voltage of 1.3 V further supports energy-efficient conduction, improving overall circuit performance.
Common applications include high-efficiency synchronous rectification, uninterruptible power supplies (UPS), motor control circuits, and hard-switched or high-frequency power switching. The single transistor configuration facilitates straightforward circuit integration for diverse system designs.
Supports high drain current and voltage ratings for power electronics. Enhanced reliability with improved body diode recovery characteristics. Efficient thermal management through TO-247AC package design. Wide temperature operational range ensures versatility in industrial environments.
Optimized gate threshold and charge for fast and efficient switching.
This product is suitable for industrial, automotive, telecom, and power supply applications requiring reliable and high-performance MOSFET transistors. EnvMart offers this Infineon IRFP4568PBF as part of its semiconductor and discrete component catalog for electronics manufacturing and repair professionals looking for proven quality and performance.
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