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onsemi QFET Type P-Channel MOSFET, 1.8 A Drain Current, 150 V Drain Source Voltage, 42 W Power Dissipation, 8-Pin FDMC2523P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.95mm |
| Length | 3mm |
| Model | FDMC2523P |
| Width | 3mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | MLP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.8A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 3.6Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 6.2nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | -5V |
Key Features
- Designed using advanced QFET process technology for improved efficiency.
- Enhancement mode channel for enhanced switching performance.
- Maximum power dissipation of 42 W suitable for high power applications.
- Compact dimensions with 3 mm length, 3 mm width, and 0.95 mm height.
- Maximum gate-source voltage of 30 V provides robust gate control.
- Low on-resistance of 3.6 ohms reduces conduction losses.
- Typical gate charge of 6.2 nC aids low switching losses.
- Wide operating temperature range from -55°C to 150°C.
Product Description
onsemi FDMC2523P QFET Type P-Channel MOSFET is a high-performance planar MOSFET designed to deliver excellent electrical characteristics for a broad range of industrial and electronic applications. It supports a maximum continuous drain current of 1.8 A with a drain-source voltage rating of 150 V, making it suitable for moderately high voltage switching and amplification tasks.
This MOSFET employs onsemi's advanced QFET® process technology, which reduces on-state losses by lowering the on-resistance (Rds(on)) to 3.6 ohms and minimizes switching losses through a typical gate charge (Qg) of 6.2 nC. Its enhancement mode operation offers reliable performance and ease of gate drive.
The device is packaged in a compact 8-pin Molded Leadless Package (MLP) with physical dimensions of 3 mm × 3 mm × 0.95 mm, ideal for surface mount installation on PCBs. It can dissipate up to 42 W of power, supporting robust operation under demanding conditions. The operating temperature span ranges from -55°C to 150°C, suitable for harsh industrial environments.
Additional technical parameters include a maximum gate-source voltage of 30 V and a forward voltage of -5 V. The MOSFET is not certified under automotive standards but is designed for applications such as power supplies, power factor correction (PFC), DC-DC converters, plasma display panels, lighting ballasts, and motion control systems.
This transistor is an essential component for electronics manufacturers and engineers focused on power management and high efficiency switching circuits. Designed using advanced QFET process technology for improved efficiency.
Enhancement mode channel for enhanced switching performance. Maximum power dissipation of 42 W suitable for high power applications. Compact dimensions with 3 mm length, 3 mm width, and 0.95 mm height. Maximum gate-source voltage of 30 V provides robust gate control.
Low on-resistance of 3.6 ohms reduces conduction losses. Typical gate charge of 6.2 nC aids low switching losses. Wide operating temperature range from -55°C to 150°C. Surface mount package (MLP) for automated PCB assembly.
Suitable for power supplies, PFC circuits, DC-DC converters, lighting ballasts, and motion control. Explore more power and semiconductor components from onsemi in EnvMart’s Electronics & Electricals category for your industrial and laboratory needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.8 A.
This MOSFET has a maximum drain-source voltage rating of 150 V.
It can dissipate up to 42 W of power, making it suitable for high power applications.
The dimensions of this MOSFET are 3 mm in length, 3 mm in width, and 0.95 mm in height.
The maximum gate-source voltage for this model is 30 V.
The typical gate charge is 6.2 nC, which aids in reducing switching losses.
The on-resistance (Rds(on)) is 3.6 ohms, which helps reduce conduction losses.
It operates within a temperature range of -55°C to 150°C, suitable for harsh environments.
It is packaged in an 8-pin Molded Leadless Package (MLP), ideal for surface mount installation.
This model is suitable for applications such as power supplies, power factor correction (PFC), DC-DC converters, and lighting ballasts.
It uses a P-channel type channel, designed for enhancement mode operation.
The forward voltage for this MOSFET is -5 V.
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