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onsemi PowerTrench Type N-Channel MOSFET, 170 mA, 100 V Enhancement, Surface Mount SOT-23 Package BSS123

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onsemi PowerTrench Type N-Channel MOSFET, 170 mA, 100 V Enhancement, Surface Mount SOT-23 Package BSS123

Name: onsemi PowerTrench Type N-Channel MOSFET, 170 mA, 100 V Enhancement, Surface Mount SOT-23 Package BSS123
Brand: onsemi
SKU: 101065
Price: 0.14 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.93mm
Length	2.92mm
Model	BSS123
Width	1.3mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q100, AEC-Q101, AEC-Q200
Channel Type	Type N
Maximum Continuous Drain Current Id	170mA
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	360mW
Typical Gate Charge Qg @ Vgs	1.8nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.3V

Key Features

Maximum continuous drain current of 170 mA ensures reliable low-power switching.
Withstands a maximum drain-source voltage of 100 V for robust operation.
Features an enhancement-mode channel type with low maximum drain-source resistance of 6Ω for efficient performance.
Maximum power dissipation is rated at 360 mW to maintain device integrity.
Compact dimensions of length 2.92 mm, width 1.3 mm, and height 0.93 mm allow for high-density circuit design.
Suitable for wide operating temperatures from -55°C to 150°C, suitable for harsh environments.
Includes automotive standards compliance AEC-Q100, AEC-Q101, and AEC-Q200 for automotive reliability.
Maximum gate-source voltage rating of 20 V and a typical gate charge of 1.8 nC support switching efficiency.

Product Description

onsemi BSS123 is a PowerTrench® N-Channel MOSFET designed for efficient low-power switching applications in electronic circuits. It is housed in the compact SOT-23 surface mount package, making it suitable for use in dense PCB layouts and advanced electronic assemblies. The device supports a maximum continuous drain current of 170 mA and can withstand drain-source voltages up to 100 V, balancing power capacity with size.

This enhancement mode MOSFET features a low maximum drain-source resistance of 6Ω, enabling energy-efficient operation with minimal heat generation. Power dissipation is limited to 360 mW, and the device can operate reliably in a wide temperature range from -55°C to 150°C, making it adaptable for both consumer electronics and industrial applications.

With a typical gate charge of only 1.8 nC and a maximum gate-source voltage of 20 V, the BSS123 supports fast switching and reduced driver losses. Its forward voltage of 1.3 V further reduces conduction losses, improving overall system efficiency.

Designed to meet stringent automotive standards, including AEC-Q100, AEC-Q101, and AEC-Q200, this MOSFET is suitable for automotive electronics and other high-reliability environments.

Maximum continuous drain current of 170 mA. Maximum drain-source voltage of 100 V. SOT-23 surface mount package with 3 pins. Low maximum drain-source resistance of 6Ω. Power dissipation rated at 360 mW. Operating temperature range from -55°C to 150°C.

Automotive compliant (AEC-Q100, AEC-Q101, and AEC-Q200). Typical gate charge of 1.8 nC with max gate-source voltage of 20 V. Forward voltage of 1.3 V for efficient conduction.

This power MOSFET is ideal for use in industrial circuits, automotive electronics, consumer devices, and other applications requiring efficient, compact, and reliable switching components. Explore more semiconductors and MOSFET products in the Electronics & Electricals category on EnvMart.