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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | ZXMN3A03E6TA |
| Width | 1.8mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 4.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 12.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.95V |
DiodesZetex ZXMN3A03E6TA is a Type N-Channel MOSFET designed for surface-mount applications requiring efficient switching and power control. It features a maximum continuous drain current rating of 4.6 amperes and a maximum drain-source voltage of 30 volts within a compact 6-pin SOT-23 package, making it suitable for dense electronic circuit designs.
Operating in enhancement mode, this MOSFET delivers low conduction losses with a maximum drain-source resistance of 50 milliohms. It supports a power dissipation of up to 1.7 watts, which ensures dependable performance in moderate power applications. The device can operate across a wide temperature range from -55°C to 150°C, suitable for harsh environmental conditions encountered in industrial, automotive, and consumer electronics.
The typical gate charge of 12.6 nanocoulombs enables fast switching capabilities, reducing switching losses and improving efficiency. Its maximum gate-source voltage rating is 20 volts, protecting the gate oxide from damage under high voltage stress.
Compact physical dimensions (3.1mm length, 1.8mm width, 1.3mm height) facilitate high-density PCB layouts. This MOSFET meets the automotive standard AEC-Q101, making it ideal for automotive electronic systems requiring strict quality and reliability standards.
This product is widely used in industrial control circuits, power management, automotive electronics, and other applications requiring reliable, high-speed switching MOSFETs. This N-Channel MOSFET operates in enhancement mode for efficient switching.
It has a low maximum drain-source resistance of 50 milliohms ensuring low power loss. The device supports a maximum power dissipation of 1.7W for robust operation. It withstands a wide operating temperature range from -55°C to 150°C.
Typical gate charge is 12.6nC at Vgs, enabling fast switching and low gate drive power. The maximum gate-source voltage is rated at 20V to protect the gate dielectrics. Its compact dimensions enable dense PCB layouts and space-saving designs.
The product complies with automotive standard AEC-Q101 for reliable automotive use. Explore more DiodesZetex semiconductor components and MOSFETs in the EnvMart catalog for industrial, automotive, and electronics manufacturing applications.
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