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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFB11N50APBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFB11N50A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 520mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
| N-channel MOSFET,IRFB11N50A 11A 500VBrand | Vishay |
Vishay IRFB11N50APBF is a power MOSFET designed for industrial and power electronics applications requiring reliable high-voltage switching. This N-channel enhancement device supports a maximum continuous drain current of 11 amperes and can withstand drain source voltages up to 500 volts. It comes in a 3-pin TO-220AB package, facilitating secure through-hole board mounting and efficient heat dissipation via bolting to external heatsinks or chassis.
The device operates effectively within a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial, laboratory, and commercial applications. It features a maximum power dissipation of 170 watts, which allows it to handle significant switching loads with an Rds(on) resistance of 520 milliohms for predictable conduction losses.
The gate charge of 52 nanocoulombs aids in designing controlled gate drive circuits, while a maximum gate source voltage of 30 volts protects the device from excessive gate voltages. The forward voltage drop of 1.5 volts is an important parameter for system loss and thermal calculations.
Typical applications include high-voltage power supplies, industrial motor drives, power inverters, switch-mode power regulators, and laboratory power test rigs. Its robust design and package type enable reliable attachment to cooling systems to maintain operational stability.
Supports continuous drain current of 11 amperes for heavy load applications. Operates up to a maximum drain source voltage of 500 volts for high-voltage switching. Maximum power dissipation capacity of 170 watts enables significant power handling.
Enhancement channel mode ensures controlled switching performance. Low maximum drain source resistance of 520 milliohms reduces conduction losses. Typical gate charge of 52 nanocoulombs allows efficient gate drive design.
Maximum gate source voltage limit of 30 volts for gate protection. Forward voltage of 1.5 volts impacts conduction efficiency calculations. Operating temperature range from -55°C to 150°C suitable for harsh environments.
Compact TO-220AB through-hole mounting for easy heatsinking and thermal management. Explore the Vishay range of power semiconductors and MOSFETs for high-quality industrial and electronic solutions at EnvMart.
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