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Vishay Power MOSFET 11 A, 500 V Enhancement, TO-220AB Package IRFB11N50APBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRFB11N50APBF
Width 4.7mm
Mount Type Through Hole
Series IRFB11N50A
Maximum Operating Temperature 150°C
Package Type TO-220AB
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 11A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 520mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 170W
Typical Gate Charge Qg @ Vgs 52nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.5V
N-channel MOSFET,IRFB11N50A 11A 500VBrand Vishay

Key Features

  • Supports continuous drain current of 11 amperes for heavy load applications.
  • Operates up to a maximum drain source voltage of 500 volts for high-voltage switching.
  • Maximum power dissipation capacity of 170 watts enables significant power handling.
  • Enhancement channel mode ensures controlled switching performance.
  • Low maximum drain source resistance of 520 milliohms reduces conduction losses.
  • Typical gate charge of 52 nanocoulombs allows efficient gate drive design.
  • Maximum gate source voltage limit of 30 volts for gate protection.
  • Forward voltage of 1.5 volts impacts conduction efficiency calculations.

Product Description

Vishay IRFB11N50APBF is a power MOSFET designed for industrial and power electronics applications requiring reliable high-voltage switching. This N-channel enhancement device supports a maximum continuous drain current of 11 amperes and can withstand drain source voltages up to 500 volts. It comes in a 3-pin TO-220AB package, facilitating secure through-hole board mounting and efficient heat dissipation via bolting to external heatsinks or chassis.

The device operates effectively within a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial, laboratory, and commercial applications. It features a maximum power dissipation of 170 watts, which allows it to handle significant switching loads with an Rds(on) resistance of 520 milliohms for predictable conduction losses.

The gate charge of 52 nanocoulombs aids in designing controlled gate drive circuits, while a maximum gate source voltage of 30 volts protects the device from excessive gate voltages. The forward voltage drop of 1.5 volts is an important parameter for system loss and thermal calculations.

Typical applications include high-voltage power supplies, industrial motor drives, power inverters, switch-mode power regulators, and laboratory power test rigs. Its robust design and package type enable reliable attachment to cooling systems to maintain operational stability.

Supports continuous drain current of 11 amperes for heavy load applications. Operates up to a maximum drain source voltage of 500 volts for high-voltage switching. Maximum power dissipation capacity of 170 watts enables significant power handling.

Enhancement channel mode ensures controlled switching performance. Low maximum drain source resistance of 520 milliohms reduces conduction losses. Typical gate charge of 52 nanocoulombs allows efficient gate drive design.

Maximum gate source voltage limit of 30 volts for gate protection. Forward voltage of 1.5 volts impacts conduction efficiency calculations. Operating temperature range from -55°C to 150°C suitable for harsh environments.

Compact TO-220AB through-hole mounting for easy heatsinking and thermal management. Explore the Vishay range of power semiconductors and MOSFETs for high-quality industrial and electronic solutions at EnvMart.

Vishay Power MOSFET 11 A, 500 V Enhancement, TO-220AB Package IRFB11N50APBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 11 amperes, suitable for heavy load applications.

It can withstand a maximum drain source voltage of 500 volts, making it suitable for high-voltage switching applications.

The maximum power dissipation capacity is 170 watts, allowing it to handle significant power loads.

This MOSFET comes in a TO-220AB package type, which is designed for through-hole mounting.

The maximum gate source voltage limit is 30 volts, providing protection against excessive gate voltages.

The typical gate charge is 52 nanocoulombs, which aids in designing efficient gate drive circuits.

It operates effectively within a temperature range from -55°C to 150°C, suitable for harsh environments.

The forward voltage drop is 1.5 volts, which impacts conduction efficiency calculations.

The maximum drain source resistance is 520 milliohms, which helps reduce conduction losses.

This model features an N-channel enhancement mode, which ensures controlled switching performance.

The dimensions of this MOSFET are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.

This device complies with RoHS standards, ensuring it meets environmental regulations.

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