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Infineon HEXFET Type P-Channel MOSFET, 12 A Continuous Drain Current, 55 V Drain-Source Voltage, 45 W Power IRF9Z24NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF9Z24NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 175mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.6V |
| P-channel MOSFET,IRF9Z24N 12A 55VBrand | International Rectifier |
Key Features
- The MOSFET supports a continuous drain current of 12 amperes for high current capabilities.
- Maximum drain-source voltage rating of 55 volts suits moderate power circuits.
- Low on-resistance of 175 milliohms reduces conduction power losses.
- Designed with a TO-220 package for through-hole mounting and optimal thermal dissipation.
- Operates reliably between -55°C and 175°C, enabling use in harsh industrial environments.
- Typical gate charge of 19 nanocoulombs ensures fast switching performance.
- Maximum power dissipation rating of 45 watts facilitates high power operation.
- Enhancement mode P-channel configuration ideal for high-side switching applications.
Product Description
Infineon IRF9Z24NPBF is a HEXFET Type P-Channel MOSFET packaged in 3-pin TO-220 format, engineered for robust power management and electronic control systems. It features a maximum continuous drain current of 12 amperes and a maximum drain-source voltage of 55 volts, making it suitable for powering and switching diverse electronic loads with efficient performance.
The low on-resistance (Rds(on)) of 175 milliohms minimizes power wastage, while the 45-watt maximum power dissipation rating enhances thermal handling capacity. The device is enhancement mode with a typical gate charge of 19 nanocoulombs at 10V gate-source voltage, allowing swift voltage switching and reduced switching losses.
This MOSFET is designed for through-hole mounting, simplifying integration into printed circuit boards and allowing effective heat dissipation via its TO-220 package. Its wide operating temperature range from -55°C to +175°C ensures reliability across industrial, automotive, and consumer electronics environments.
Applications include usage in power management systems for industrial automation, switch mode power supplies, audio amplifiers, and various consumer electronic devices requiring efficient, reliable high-side switching capability.
The MOSFET supports a continuous drain current of 12 amperes for high current capabilities. Maximum drain-source voltage rating of 55 volts suits moderate power circuits. Low on-resistance reduces conduction power losses.
TO-220 package designed for through-hole mounting and thermal management. Wide operating temperature range for versatile industrial applications. Typical gate charge ensures fast switching performance. 45 watts maximum power dissipation enhances thermal stability.
Ideal for high-side switching with enhancement mode P-channel configuration. Explore this MOSFET and related semiconductor components in the Electronics & Electricals category at EnvMart for industrial and commercial electronics design.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 amperes.
This MOSFET has a maximum drain-source voltage rating of 55 volts.
The IRF9Z24NPBF is packaged in a TO-220 format designed for through-hole mounting.
It operates reliably between -55°C and 175°C, making it suitable for harsh industrial environments.
The typical gate charge at 10V gate-source voltage is 19 nanocoulombs.
The maximum power dissipation rating for this model is 45 watts.
The low on-resistance (Rds(on)) is 175 milliohms, which helps reduce conduction power losses.
This model features a P-channel configuration and operates in enhancement mode.
The dimensions are 10.54mm in length, 4.69mm in width, and 8.77mm in height.
It is suitable for applications in power management systems, switch mode power supplies, and audio amplifiers.
The maximum gate-source voltage for this MOSFET is 20 volts.
The country of origin for this model is India.
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