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Vishay N-Channel MOSFET TO-252 Package, 100 V, 4.3 A, Enhancement Mode IRFR110PBF

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Vishay N-Channel MOSFET TO-252 Package, 100 V, 4.3 A, Enhancement Mode IRFR110PBF

Name: Vishay N-Channel MOSFET TO-252 Package, 100 V, 4.3 A, Enhancement Mode IRFR110PBF
Brand: Vishay
SKU: 99502
Price: 0.55 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	2.39mm
Length	6.73mm
Model	IRFR110PBF
Width	6.22mm
Mount Type	Surface
Series	IRFR
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	4.3A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	540mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	8.3nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	2.5V
N-channel MOSFET,IRFR110 4.3A 100V 75pcsBrand	Vishay

Key Features

Designed for high efficiency switching in power applications.
Maximum continuous drain current of 4.3 A for reliable operation.
Low drain-source resistance of 540 milliohms to reduce conduction losses.
Maximum power dissipation of 2.5 W ensuring good thermal handling.
Operates over a wide temperature range from -55°C to 150°C.
Typical gate charge of 8.3 nC enables fast switching speeds.
Maximum gate-source voltage of 20 V for improved control.
Compact TO-252 package with 3 pins suited for surface mounting.

Product Description

The Vishay IRFR110PBF is an N-Channel MOSFET designed for efficient switching and amplification in power electronic circuits. Packaged in a compact TO-252 form factor with 3 pins, this device features a maximum drain-source voltage of 100 V and can continuously handle a drain current of up to 4.3 amperes, making it ideal for medium-power switching applications in industrial and electronic components.

This enhancement mode transistor provides a low Rds(on) resistance of 540 milliohms to minimize conduction losses and optimize power efficiency. The device supports a maximum power dissipation of 2.5 W and operates reliably across a wide temperature range from -55°C up to 150°C, suitable for diverse environmental conditions.

Equipped with a typical gate charge of 8.3 nC, it enables fast switching performance, helping reduce heat generation in high-frequency applications. The maximum gate-source voltage rating of 20 V ensures robust gate control without risk of damage.

The TO-252 package offers a compact surface-mount solution, simplifying PCB assembly and maintaining a low thermal resistance for enhanced heat dissipation. Though it lacks automotive standard certifications, this MOSFET is widely used in industrial power supply circuits, motor drivers, and general purpose switching devices.

Designed for efficient power switching applications. Capable of handling continuous drain current of 4.3 A. Low Rds(on) resistance reduces conduction losses. Wide operating temperature range from -55 to 150°C. Compact 3-pin TO-252 surface-mount package.

Typical gate charge supports fast switching speeds. Maximum gate-source voltage of 20 V for protection and control. Maximum power dissipation rating of 2.5 W. Ideal for industrial electronics and power circuits. Reliable performance without automotive certification.

This Vishay MOSFET model IRFR110PBF is well suited for industrial and commercial application environments including power supplies, motor control, and electronic component designs. Search EnvMart for more Vishay semiconductor solutions and related MOSFET devices.