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Vishay IRFI Type N-Channel Power MOSFET 4.6 A, 500 V Enhancement Mode, 3-Pin TO-220FP IRFI840GPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Model | IRFI840GPBF |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 4.6A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 0.85Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 2V |
Key Features
- Type N channel enhancement mode device for efficient switching.
- Maximum continuous drain current of 4.6 amperes.
- Rated for 500 volts drain to source voltage.
- Low gate charge of 67 nC at Vgs for fast switching.
- Maximum power dissipation of 40 watts ensures robust operation.
- Wide operating temperature range from -55°C to 150°C.
- Through-hole mount type suitable for PCB integration.
- Forward voltage of 2 volts for efficient conduction.
Product Description
Vishay IRFI840GPBF is a Type N-Channel Power MOSFET featuring an enhancement mode design, delivering a maximum continuous drain current of 4.6 A and a maximum drain-source voltage of 500 V. Packaged in a 3-pin TO-220FP format, this MOSFET is engineered for reliable switching and power applications in various industrial and electronic devices.
The device supports through-hole mounting and offers a maximum power dissipation of 40 watts, making it suitable for robust power control solutions. Its low typical gate charge of 67 nC at the specified gate-source voltage enables efficient high-speed switching with minimal losses.
Operating over a wide temperature range from -55°C to 150°C, the IRFI840GPBF maintains stable performance under demanding thermal conditions. A forward voltage of 2 volts enhances conduction efficiency, contributing to reduced energy dissipation in circuits.
This MOSFET is RoHS compliant, ensuring it meets environmental safety and quality standards. It is primarily used in power management, motor control, and switching power supplies within industrial, electronic manufacturing, and HVAC sectors.
Type N channel enhancement mode device for efficient switching. Maximum continuous drain current of 4.6 amperes. Rated for 500 volts drain to source voltage. Low gate charge of 67 nC at Vgs for fast switching. Maximum power dissipation of 40 watts ensures robust operation.
Wide operating temperature range from -55°C to 150°C. Through-hole mount type suitable for PCB integration. Forward voltage of 2 volts for efficient conduction. Package height of 9.8 mm facilitates compact design. RoHS compliant for environmental standards.
This product is ideal for electronic component assemblies requiring reliable power switching and control. Explore other MOSFET and semiconductor products within EnvMart for comprehensive project solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.6 A.
It is rated for a maximum drain-source voltage of 500 V.
The typical gate charge at Vgs is 67 nC, facilitating efficient high-speed switching.
This model has a maximum power dissipation of 40 W.
The operating temperature range is from -55°C to 150°C.
It supports through-hole mounting, making it suitable for PCB integration.
The package type is TO-220FP, which is designed for efficient heat dissipation.
This MOSFET has 3 pins.
The forward voltage is 2 V, which enhances conduction efficiency.
This product is RoHS compliant, ensuring it meets environmental safety standards.
It features a Type N channel design, which is an enhancement mode device.
The maximum gate-source voltage is 20 V.
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