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Vishay TrenchFET Type N-Channel MOSFET, 2.3 A Continuous Drain Current, 60 V Drain Source Voltage, Surface SQ2308CES-T1_GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.04mm |
| Model | SQ2308CES-T1_GE3 |
| Width | 2.64mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 2.3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 164mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a maximum drain source voltage of 60 V suitable for various power switching applications.
- Features a low maximum drain source resistance of 164 milliohms ensuring efficient conduction.
- Capable of continuous drain current up to 2.3 A facilitating medium power applications.
- Operating temperature range from -55°C to 175°C ensures reliability under harsh conditions.
- Surface mount SOT-23 package with 3 pins suitable for compact PCB designs.
- Maximum power dissipation rated at 2 watts for thermal management considerations.
- Enhanced channel mode with typical gate charge of 3.5 nanocoulombs for fast switching performance.
- Complies with Automotive Standard AEC-Q101, ensuring automotive quality and reliability.
Product Description
Vishay SQ2308CES-T1_GE3 is a high-quality TrenchFET Type N-Channel MOSFET designed for surface mount applications in compact 3-pin SOT-23 packages. It features a continuous drain current rating of 2.3 A and can withstand a maximum drain source voltage of 60 volts, making it suitable for medium power load switching and power management circuits.
The device operates within a broad temperature range from -55°C up to 175°C, which supports reliable performance even under extreme environmental conditions. With a maximum power dissipation of 2 watts and a low forward voltage drop of 1.2 V, it is optimized for low conduction and switching losses, enhancing overall circuit efficiency.
SQ2308CES-T1_GE3 has a maximum drain source resistance of 164 milliohms, measured at Vgs of 10 V, and a typical gate charge of just 3.5 nanocoulombs, supporting fast switching characteristics suitable for DC/DC converters and adapter switch applications. The maximum gate source voltage is 20 volts, enabling robust gate control and protection.
This MOSFET complies with the automotive standard AEC-Q101 and is halogen free and Pb-free, ensuring environmental compliance and suitability for automotive and industrial electronic assemblies.
Maximum Drain Source Voltage: 60 V. Continuous Drain Current: 2.3 A. Package Type: SOT-23 Surface Mount. Power Dissipation: 2 W. Operating Temperature Range: -55°C to 175°C. Maximum Gate Source Voltage: 20 V. Maximum Drain Source Resistance: 164 mΩ.
Typical Gate Charge: 3.5 nC. Automotive Standard: AEC-Q101 Certified. Lead Free and Halogen Free Construction.
This component is ideal for use in industrial electronics, automotive circuits, power adapters, and DC/DC converters requiring low loss, reliable switching components. The compact SOT-23 package facilitates space-saving PCB layouts without compromising performance or thermal handling.
Explore EnvMart's extensive semiconductor catalog to find more Vishay MOSFETs and complementary components for your electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.3 A.
It supports a maximum drain source voltage of 60 V.
The operating temperature range is from -55°C to 175°C.
This model comes in a surface mount SOT-23 package with 3 pins.
The maximum power dissipation is rated at 2 watts.
The maximum gate source voltage is 20 V.
The maximum drain source resistance is 164 milliohms, measured at a Vgs of 10 V.
The typical gate charge is 3.5 nanocoulombs.
It complies with the Automotive Standard AEC-Q101.
The forward voltage drop is 1.2 V.
The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.12 mm in height.
This model is suitable for medium power load switching and power management circuits, including industrial electronics and automotive applications.
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