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| Country of Origin | China |
|---|---|
| Diameter | 3.18mm |
| Brand | onsemi |
| Height | 15.87mm |
| Length | 10.16mm |
| Model | FFSPF1065A |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 10A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 600μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 720A |
| Maximum Forward Voltage Vf | 1.75V |
| onsemi 650 V 10 A Diode Schottky 2-Pin TO-220 FFSPF1065ABrand | onsemi |
onsemi FFSPF1065A is a Silicon Carbide (SiC) Schottky Diode designed for high reliability and superior switching performance. It operates at a maximum continuous forward current of 10 A and can block voltages up to 650 V, packaged in a 2-pin TO-220 form factor suitable for through-hole mounting.
This diode adopts advanced SiC technology, eliminating reverse recovery current and providing temperature-independent switching characteristics, which contributes to higher efficiency and reduced electromagnetic interference in power systems.
It supports maximum junction temperatures up to 175°C and has a peak non-repetitive forward surge current rating of 720 A, making it ideal for demanding industrial and power electronic applications.
Typical applications include power factor correction (PFC), industrial power supplies, solar inverters, electric vehicle (EV) chargers, uninterruptible power supplies (UPS), and welding equipment, where high efficiency and thermal performance are critical.
Utilizes silicon carbide Schottky technology for fast switching and enhanced reliability. Maximum continuous forward current of 10 A and peak reverse voltage of 650 V. Low forward voltage drop of 1.75 V improves conductive efficiency.
Wide operating temperature range of -55°C to 175°C ensures stable operation under harsh conditions. TO-220 package allows easy mounting on heat sinks and standard PCB layouts. Peak reverse current is minimal at 600 μA, reducing leakage power loss.
Designed without reverse recovery, reducing switching losses and electromagnetic interference. Compact dimensions of approximately 15.87 mm height, 10.16 mm length, and 4.7 mm width. Country of Origin: China.
This Schottky diode is the next generation solution in power semiconductors offering improved efficiency, power density, and cost effectiveness. It is a recommended component for industrial, laboratory, HVAC, manufacturing, and commercial electrical power applications requiring robust diode performance.
Explore additional semiconductor components and power devices in EnvMart’s electronics category for comprehensive system design needs.
Explore more products in our Schottky Diodes & Rectifiers category.
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