onsemi Type N-Channel MOSFET 75 A 650 V Enhancement Mode 4-Pin TO-247 FCH023N65S3L4

onsemi FCH023N65S3L4 is a high-voltage Type N-Channel MOSFET designed for power semiconductor applications requiring high efficiency and reliability. This device supports a maximum continuous drain current of 75 A and a maximum drain-source voltage of 650 V, operating in Enhancement mode within a 4-pin TO-247 through-hole package.

The MOSFET utilizes advanced SuperFET® III technology employing charge balance super-junction structure which delivers outstanding low on-resistance and reduced gate charge. This design optimizes conduction and switching losses, making it ideal for power conversions and industrial electronics applications requiring miniaturization and enhanced efficiency.

Operating efficiently at temperatures from -55°C to 150°C, it provides a maximum power dissipation of 595 W. The device features a low typical gate charge of 222 nC and a maximum gate-source voltage of 30 V, ensuring superior switching speed and robust gate control. Its maximum drain-source resistance of 23 milliohms contributes to lower conduction losses, benefiting overall system performance.

The compact TO-247 4-pin package, measuring 22.74 mm in height, 15.8 mm in length, and 5.2 mm in width, supports standard through-hole mounting for reliable fixation and thermal management. This MOSFET finds applications in computing, telecommunications, industrial power systems, solar inverters, UPS, and EV circuits where high voltage and current handling are required.

High 75 A continuous drain current rating suitable for demanding power applications. Durable operation up to 650 V drain-source voltage for robust circuit design. Enhancement mode channel ensures efficient switching and conduction control.

Superior low on-resistance (Rds(on)) of 23 milliohms reduces power losses. Low gate charge of 222 nC minimizes switching energy losses. Wide operating temperature range from -55°C to 150°C enhances reliability. TO-247 4-pin through-hole package offers mechanical stability and thermal dissipation.

This onsemi MOSFET is engineered for diverse industrial and commercial semiconductor uses, including power supply regulation, motor control, DC/DC converters, and energy management systems. Its integration facilitates miniaturization and high-efficiency power system designs.

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