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Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement Mode, 8-Pin TSON Package TPN2R304PL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 0.85mm |
| Length | 3.1mm |
| Model | TPN2R304PL |
| Width | 3.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 41nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Offers a maximum continuous drain current of 100 amperes.
- Features a maximum drain-source voltage rating of 40 volts.
- Uses enhancement mode operation for high efficiency.
- Includes an 8-pin surface mount TSON package for compact applications.
- Maximum power dissipation is 104 watts for robust thermal handling.
- Operates safely between -55°C and 175°C ambient temperature.
- Low typical drain-source on-resistance of 1.8 milliohms at VGS = 10 V.
- Small gate charge of 41 nC enables fast switching performance.
Product Description
Toshiba TPN2R304PL is a high-performance Type N-Channel MOSFET designed for power electronic applications. It supports a maximum continuous drain current of 100 A and withstands drain-source voltages up to 40 V. Packaged in a compact 8-pin TSON surface mount package, this device suits applications requiring efficient power switching and thermal management.
With an enhancement-mode channel and a low typical on-resistance of 1.8 milliohms at 10 V gate drive, the TPN2R304PL reduces conduction losses. It has a maximum power dissipation capability of 104 W allowing operation under demanding thermal conditions, with a wide temperature range from -55°C to 175°C, suitable for industrial and automotive uses.
The MOSFET features a small gate charge (Qg) of 41 nC for high-speed switching applications, complemented by a low leakage current and a typical output charge of 27 nC, which minimizes switching losses. The device's forward voltage is -1.2 V, contributing to its efficiency in conduction mode.
This component is ideal for high-efficiency DC-DC converters, switching voltage regulators, and motor driver circuits in various industrial, automotive, and consumer electronic systems. Its small form factor and surface mount design make it compatible with high-density PCB layouts.
Maximum continuous drain current: 100 A. Maximum drain-source voltage: 40 V. Enhancement mode operation for efficiency. 8-pin TSON surface mount package. Low on-resistance: 1.8 mΩ typical @ VGS = 10 V. Small gate charge: 41 nC typical.
Maximum power dissipation: 104 W. Operating temperature range: -55°C to 175°C. Forward voltage: -1.2 V. Applications include DC-DC converters, switching regulators, and motor drivers. Explore more semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart for your industrial and commercial projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It has a maximum drain-source voltage rating of 40 V.
The typical on-resistance is 1.8 milliohms at VGS = 10 V.
The maximum power dissipation capability is 104 W.
It operates safely between -55°C and 175°C.
This model comes in an 8-pin TSON surface mount package.
The typical gate charge is 41 nC.
It is suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor driver circuits.
The forward voltage is -1.2 V.
It uses an enhancement mode channel type.
The dimensions are 3.1 mm in length and width, with a height of 0.85 mm.
The maximum gate-source voltage is 20 V.
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