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Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220 SPA20N60C3XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.15mm |
| Length | 10.65mm |
| Model | SPA20N60C3XKSA1 |
| Width | 4.85mm |
| Mount Type | Through Hole |
| Series | SPA20N60C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 20.7A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 34.5W |
| Typical Gate Charge Qg @ Vgs | 87nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1V |
Key Features
- The device features low drain-source resistance of 190 milliohm for efficient power management.
- It is designed with a 4-pin TO-220 package for through-hole mounting.
- Typical gate charge of 87 nC at Vgs enables fast switching performance.
- Maximum power dissipation rated at 34.5 W supports high power applications.
- Operating temperature ranges between -55°C and 150°C for robust industrial use.
- Maximum gate-source voltage is 30 V, ensuring stable operation with drive voltages of 10 V.
- Forward voltage drop is approximately 1 V, contributing to low conduction losses.
- Optimized for lower switching and conduction losses with high efficiency and reliability.
Product Description
Infineon SPA20N60C3XKSA1 Type N-Channel MOSFET is a high-performance semiconductor device designed for power switching and amplification applications. Featuring a continuous drain current of 20.7 A and a maximum drain-source voltage of 600 V, this MOSFET supports demanding industrial and electronic systems, including adapters, PC power supplies, server power, and telecommunication equipment.
The device employs an enhancement mode channel type and is packaged in a standard 4-pin TO-220 format suitable for through-hole mounting. With a drain-source resistance of 190 milliohm at a gate-source voltage of 10 V, it delivers efficient power handling and reduced conduction losses.
Key electrical characteristics include a typical gate charge of 87 nC at the gate voltage threshold, a maximum power dissipation of 34.5 W, and a maximum gate-source voltage rating of 30 V. The low forward voltage of about 1 V further reduces power lost during switching and conduction, enhancing overall efficiency.
Engineered for reliability, it operates effectively across a wide temperature range from -55°C to 150°C. The Infineon MOSFET is Pb-free, contributing to environmentally responsible manufacturing and compliance.
The product is optimized for lower switching and conduction losses. It offers high peak current capability and improved transconductance. Low gate charge minimizes switching energy consumption. Outstanding cost-performance ratio and field-proven CoolMOP™ quality.
Designed for durable industrial, laboratory, and commercial electronic applications. This MOSFET type SPA20N60C3XKSA1 is ideal for power conversion and switching functions requiring efficient, reliable, and long-lasting performance.
Explore a wide range of semiconductor components and specialized MOSFET devices within EnvMart's electronics and electricals category for your industrial and laboratory needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20.7 A.
This MOSFET has a maximum drain-source voltage rating of 600 V.
The typical gate charge at Vgs for the SPA20N60C3 is 87 nC.
It is packaged in a standard 4-pin TO-220 format suitable for through-hole mounting.
The maximum power dissipation rated for this MOSFET is 34.5 W.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The forward voltage drop is approximately 1 V, which helps in reducing conduction losses.
The drain-source resistance at a gate-source voltage of 10 V is 190 milliohm.
The maximum gate-source voltage is 30 V, ensuring stable operation with drive voltages.
This model uses an enhancement mode N-channel.
It complies with ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007 standards.
The dimensions of this MOSFET are 16.15 mm in height, 10.65 mm in length, and 4.85 mm in width.
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