ROHM Isolated Dual N-Channel Small Signal MOSFET 300 mA, 20 V, 6-Pin SOT-563 EM6K6T2R

ROHM EM6K6T2R is a high-performance isolated dual N-Channel small signal MOSFET designed for efficient switching and signal amplification in low power electronic circuits. The MOSFET features a maximum continuous drain current of 300 mA and a maximum drain-source voltage of 20 V, making it suitable for precision applications in electronics and semiconductor devices. It is housed in a compact 6-pin SOT-563 surface mount package optimized for high-density printed circuit boards.

The device operates with an enhancement mode channel configuration that provides excellent control and low on-resistance (Rds) of 1.4 Ohms, minimizing power dissipation and improving thermal management. With a maximum power dissipation rating of 150 mW and wide operating temperature range from -150°C to +150°C, the transistor ensures reliable performance even in harsh industrial environments.

The gate-source voltage rating of ±8 V and forward voltage of 1.2 V facilitate stable signal switching and conduction with minimal leakage. The dual transistor configuration integrates two N-Channel MOSFET elements per chip, enhancing functionality and circuit integration.

Typical uses of the ROHM EM6K6T2R MOSFET include signal amplification, switching in automotive electronics, industrial controls, instrumentation, and other precision electronic applications requiring compact, efficient, and reliable semiconductor components.

Dual N-Channel MOSFET transistor configuration for efficient switching. Maximum continuous drain current of 300 mA suitable for small signal applications. Drain-source voltage rating of 20 V with enhancement channel mode.

Low maximum drain-source resistance of 1.4 Ohms to reduce power loss. Compact surface mount 6-pin SOT-563 package design for high-density PCB layouts. Operates reliably within a temperature range from -150°C to 150°C. Maximum power dissipation rated at 150 mW suitable for low power circuits.

Maximum gate-source voltage of -8 V to +8 V ensures signal integrity during switching. Forward voltage of 1.2 V demonstrates efficient conduction characteristics. Chip size of 1.7 mm length, 1.3 mm width, and 0.45 mm height for compact applications.

This product is ideal for use in electronic component designs involving power and signal management within industrial, laboratory, automotive, and consumer electronics sectors. Explore the range of ROHM semiconductor devices to find reliable components tailored to your application needs at EnvMart.