Wolfspeed C3M Type N-Channel MOSFET 22 A 1 kV Enhancement 8-Pin TO-263 C3M0120100J

Wolfspeed C3M0120100J is a high-performance N-Channel MOSFET tailored for industrial, electric vehicle charging, and three-phase power supply applications. Rated for a maximum continuous drain current of 22 A and a maximum drain-source voltage of 1 kV, this device delivers low switching and conduction losses enabled by its advanced silicon carbide technology.

The MOSFET comes in an 8-pin TO-263 surface mount package measuring 10.23 mm in length, 9.12 mm in width, and 4.32 mm in height. Its optimized low source inductance package and separate driver source pin facilitate high-speed switching and easy paralleling for scalable power designs. The device supports a maximum power dissipation of 83 W and operates over a wide temperature range from -55°C to 150°C, assuring robust performance under harsh conditions.

With a channel resistance of just 170 milliohms and a typical gate charge of 21.5 nC at standard gate voltage, the MOSFET provides efficient power conversion and control. The integrated intrinsic diode features low reverse recovery characteristics, contributing to reduced switching losses in power electronics systems.

Key technical specifications include a channel mode set to enhancement, a maximum gate-source voltage of 9 V, and a forward voltage of 4.8 V. This product does not carry automotive-specific certifications but excels in demanding industrial and commercial power management scenarios.

Designed by Wolfspeed, a recognized leader in SiC semiconductor devices, the C3M0120100J model supports innovative design for power electronics with emphasis on efficiency, reliability, and high voltage operation.

Capable of handling continuous drain current of 22 A with high efficiency. Maximum drain-source voltage rating of 1 kV ensures robustness in power applications. Low on-resistance of 170 milliohms reduces conduction losses significantly.

Operates safely in temperatures ranging from -55°C to 150°C for reliability. Optimized for electric vehicles and industrial power supply systems. High maximum power dissipation of 83 W supports demanding workloads. Compact dimensions of 10.23 mm length, 9.12 mm width, and 4.32 mm height fit surface mount designs.

Features a fast intrinsic diode with low reverse recovery charge for efficiency. Easy parallel connection and simple driving due to low source inductance design. Maximum gate-source voltage is 9 V for safe gate control operation.

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