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Vishay N-Channel Enhancement MOSFET 64 A, 200 V, TO-263, 3-Pin Surface Mount SUM90220E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.82mm |
| Length | 10.41mm |
| Model | SUM90220E-GE3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | SUM90220E |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 64A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 23.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 31.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Features a TO-263 package suitable for surface mounting.
- Maximum power dissipation of 230 W for effective heat management.
- Low maximum drain source resistance of 23.5 milliohms ensures efficient switching.
- Operating temperature range from -55°C to 175°C supports harsh environments.
- Typical gate charge of 31.6 nanocoulombs at Vgs for fast switching speeds.
- Maximum gate-source voltage of 20 V to protect gate oxide integrity.
- Forward voltage drop of 1.5 V enhances efficiency in circuits.
- Three-pin configuration enables easy integration in electronic designs.
Product Description
Vishay SUM90220E-GE3 is a high-performance N-Channel MOSFET transistor, designed for power electronic applications requiring efficient switching and high current handling capacity. This enhancement-mode MOSFET is packaged in a TO-263 surface-mount configuration with three pins, making it suitable for compact PCB layouts in industrial and commercial electronics.
It offers a maximum continuous drain current of 64 A and can withstand a drain-source voltage of up to 200 V, ideal for robust power supply circuits, motor drives, and power management modules.
The device features a low on-resistance of 23.5 milliohms, which reduces conduction losses and improves thermal performance. Its maximum power dissipation rating of 230 W allows effective handling of heat in demanding operating conditions.
The operating temperature range from -55°C to 175°C enables reliability in severe and fluctuating thermal environments typical in industrial, HVAC, and manufacturing equipment.
With a typical gate charge of 31.6 nC at gate-source voltage threshold and a maximum gate-source voltage of 20 V, this MOSFET provides fast switching capabilities while protecting gate integrity from voltage spikes. The forward voltage drop of 1.5 V ensures efficient current flow, optimizing power efficiency.
TO-263 package for surface mounting and easy PCB integration. 64 A continuous drain current rating for high current applications. Low on-resistance minimizes power loss and heat generation. Broad operating temperature range supports harsh industrial conditions.
Compact size eases integration into electronic systems. Robust gate characteristics support fast switching and protection. Ideal for use in power conversion, motor control, and power management systems.
This MOSFET meets the needs of electronic engineers and system designers in semiconductor, industrial electronics, and power electronics segments. It is built for reliability, performance, and ease of use in modern electronic devices.
Explore our wide range of Vishay MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart to power your projects with trusted quality and performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 64 A.
It can withstand a maximum drain-source voltage of 200 V.
The maximum power dissipation rating is 230 W, allowing effective heat management.
The maximum drain-source resistance is 23.5 milliohms, which helps reduce conduction losses.
The typical gate charge is 31.6 nanocoulombs at the gate-source voltage threshold.
It operates within a temperature range of -55°C to 175°C, making it suitable for harsh environments.
This model is packaged in a TO-263 surface-mount configuration with three pins.
The forward voltage drop is 1.5 V, which enhances efficiency in circuits.
The maximum gate-source voltage is 20 V, which protects the gate oxide integrity.
The dimensions are 10.41 mm in length, 9.65 mm in width, and 4.82 mm in height.
It is suitable for power conversion, motor control, and power management systems.
The SUM90220E-GE3 features an N-channel enhancement mode.
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