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Toshiba DTMOSIV N-Channel MOSFET 6.8A, 650V, TO-252 Surface Mount, 3-Pin TK7P65W,RQ(S)
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | TK7P65W,RQ(S |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | DTMOSIV |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 6.8A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 800mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Enhancement mode N-channel MOSFET for fast switching and low power loss.
- Rated for maximum drain current of 6.8A and voltage of 650V.
- TO-252 surface mount package with 3 pins for compact PCB integration.
- Maximum power dissipation of 60W supports demanding workloads.
- Low drain-source resistance (800mΩ) ensures efficient operation.
- Gate charge of 15nC at Vgs for reliable switching performance.
- Supports maximum gate-source voltage up to 30V for flexible electronics design.
- High operating temperature up to 150°C for robust durability.
Product Description
Toshiba TK7P65W,RQ(S) DTMOSIV N-Channel MOSFET is engineered for reliable operation in power electronics, providing a high drain current rating of 6.8A and excellent voltage tolerance up to 650V. The enhancement mode allows for faster switching and low power consumption, making it a suitable component in demanding industrial, commercial, and laboratory circuits.
Enhancement mode device offers low switching losses and quick response for power conversion and amplification tasks. Integrated in a TO-252 surface mount package, it provides a small footprint and simplifies PCB design. Rated drain-source resistance of 800mΩ ensures efficient energy transfer and reduced heat dissipation.
Maximum power dissipation of 60W enables use in high-power circuits without reliability concerns. Typical gate charge of 15nC at Vgs simplifies driving requirements for microcontroller and logic interfaces. Operates safely with gate-source voltage up to 30V and withstands high forward voltage (-1.7V).
Thermal tolerance covers environments up to 150°C, ideal for industrial automation and robust designs.
Typical use cases include motor drives, inverters, switching power supplies, and solar or battery energy management systems, where efficiency and reliability are paramount. Designed for surface mounting, the MOSFET facilitates production in commercial and laboratory electronics, where space-saving and performance are required.
For more MOSFET components, power transistors, and semiconductors, explore the EnvMart Electronics & Electricals category or Toshiba brand lineup.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.8A.
This MOSFET is rated for a maximum drain-source voltage of 650V.
It has a maximum power dissipation capacity of 60W, suitable for high-power applications.
The typical gate charge at Vgs is 15nC, which simplifies driving requirements for control circuits.
The dimensions of the TO-252 package are 6.6mm in length, 6.1mm in width, and 2.3mm in height.
This model can operate at a maximum temperature of 150°C.
The rated drain-source resistance is 800mΩ, ensuring efficient operation.
It is designed for surface mounting, facilitating compact PCB integration.
The maximum gate-source voltage supported is 30V.
Typical applications include motor drives, inverters, and switching power supplies.
This model features an enhancement mode N-channel configuration.
The forward voltage rating is -1.7V.
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