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Vishay EF Type N-Channel Power MOSFET 6A 850V Depletion TO-220 SIHA15N80AEF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHA15N80AEF-GE3 |
| Mount Type | Surface |
| Series | EF |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 850V |
| Maximum Drain Source Resistance Rds | 0.35Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 33W |
| Typical Gate Charge Qg @ Vgs | 54nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Operates at 850V maximum drain-source voltage, supporting high-voltage applications.
- 6A continuous drain current for medium-power loads.
- Depletion-mode N-channel design with low 0.35Ω Rds(on).
- 33W power dissipation enables sustained thermal handling.
- AEC-Q101 qualified for automotive reliability.
- Surface mount TO-220 package with 3-pin configuration.
- Typical gate charge of 54nC allows for predictable gate-drive design.
- RoHS compliant for global regulatory needs.
Product Description
Vishay SIHA15N80AEF-GE3 EF Type N-Channel Power MOSFET is engineered for demanding industrial, automotive, and power management applications. Featuring a maximum drain-source voltage of 850V and a continuous drain current of 6A, this device excels in high-voltage switching environments and medium-power load handling. Its depletion-mode N-channel design ensures effective control and efficient switching, while minimizing conduction losses with a low 0.35Ω Rds(on).
The TO-220 surface-mount package with three pins simplifies integration and provides flexibility for thermal management options, making it suitable for board-level power conversion. With a maximum power dissipation of 33W, the MOSFET withstands sustained thermal loads, contributing to reliable performance in switch-mode power supplies, motor drives, and inverter front-end applications.
Operates at 850V maximum drain-source voltage, supporting high-voltage applications. 6A continuous drain current for medium-power loads. Depletion-mode N-channel design with low 0.35Ω Rds(on). 33W power dissipation enables sustained thermal handling.
AEC-Q101 qualified for automotive reliability. Surface mount TO-220 package with 3-pin configuration. Wide operating temperature range: -55°C to +150°C. Typical gate charge of 54nC allows for predictable gate-drive design.
RoHS compliant for global regulatory needs.
Its ±30V gate-source voltage provides protection against excessive gate stress, and RoHS compliance ensures suitability for global regulatory environments. The device is ideal for applications such as industrial high-voltage power converters, automotive electronics meeting AEC-Q101 standards, auxiliary power supplies, and harsh environment electronics.
Designers benefit from its predictable gate-drive requirements and robust performance across a wide temperature range, making it a versatile choice for efficient and reliable power switching.
Find more Vishay MOSFETs and advanced semiconductor products in EnvMart's Electronics & Electricals section.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 850V, making it suitable for high-voltage applications.
It has a continuous drain current rating of 6A, which is suitable for medium-power loads.
This depletion-mode N-channel MOSFET features a low Rds(on) value of 0.35Ω, which helps minimize conduction losses.
The maximum power dissipation for this MOSFET is 33W, allowing it to handle sustained thermal loads effectively.
It comes in a TO-220 surface mount package with a 3-pin configuration, facilitating easy integration.
The operating temperature range for this MOSFET is from -55°C to +150°C, making it versatile for various applications.
This model is AEC-Q101 qualified, ensuring reliability for automotive applications.
The typical gate charge for this device is 54nC, which allows for predictable gate-drive design.
The maximum gate-source voltage for this MOSFET is ±30V, providing protection against excessive gate stress.
Yes, this model is RoHS compliant, ensuring it meets global regulatory requirements.
It is suitable for industrial high-voltage power converters, automotive electronics, and auxiliary power supplies.
This device features a depletion-mode N-channel design, which is effective for control and efficient switching.
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