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Vishay N-Channel MOSFET, 100 V, 150 A, TO-220 Package, SUP70042E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.65mm |
| Length | 29.51mm |
| Model | SUP70042E-GE3 |
| Width | 10.51mm |
| Mount Type | Surface |
| Series | N-Channel 100 V |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 150A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4.5mΩ |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.8V |
Key Features
- N-channel MOSFET with a maximum drain-source voltage of 100 V.
- Supports continuous drain current ratings up to 150 A for demanding power handling.
- Low Rds(on) of 4.5mΩ enables efficient, low-loss operation.
- TO-220 package with 3-pin configuration for easy mounting and integration.
- Maximum power dissipation is 278 W, suitable for high-power electronics.
- Operates within a broad temperature range from -55°C to 175°C junction temperature.
- Gate-source voltage tolerance up to ±20 V for application flexibility.
- 84 nC typical gate charge at Vgs, optimizing for fast switching performance.
Product Description
The Vishay SUP70042E-GE3 is a high-performance N-Channel MOSFET designed for applications requiring robust power management and efficient switching capabilities. This device is built to operate with a maximum drain-source voltage (Vds) of 100 V and can handle continuous drain currents up to 150 A, making it suitable for demanding industrial, automotive, and power supply environments.
Encased in a TO-220 package, the SUP70042E-GE3 features a standard 3-pin layout for straightforward PCB or heatsink mounting. Its low Rds(on) of 4.5 milliohms ensures minimal conduction losses, improving efficiency and thermal performance under high loads. The device accommodates a typical gate charge of 84 nC at Vgs, enabling fast and reliable switching.
This MOSFET supports maximum power dissipation up to 278 W and can safely operate across a broad junction temperature range from -55°C to 175°C. The ±20 V maximum gate-source voltage further enhances the flexibility for integrating this MOSFET into diverse circuit designs. Forward voltage (Vf) is rated at 0.8 V, suitable for advanced power electronics where voltage drop and efficiency are critical considerations.
N-channel type for standard MOSFET driver compatibility. Surface mount configuration with robust TO-220 package for enhanced thermal management. Tested for Rg and Unclamped Inductive Switching (UIS) reliability. Compliant for use in industrial automation, high-power switching regulators, battery management, and inverter systems.
Reliability data supports deployment in critical and mission-driven systems.
With its superior current handling, low on-resistance, and rugged design, the Vishay SUP70042E-GE3 MOSFET is widely used in industrial power supplies, motor drives, renewable energy converters, and other demanding electrical engineering applications where reliability and high efficiency are essential.
Explore more Vishay power management semiconductors in the MOSFET category on EnvMart.
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Frequently Asked Questions
The Vishay SUP70042E-GE3 has a maximum drain-source voltage (Vds) of 100 V.
It supports continuous drain current ratings up to 150 A, suitable for demanding power applications.
The device features a low Rds(on) of 4.5 mΩ, which helps in reducing conduction losses during operation.
This MOSFET can handle a maximum power dissipation of 278 W, making it suitable for high-power applications.
The typical gate charge at Vgs is 84 nC, optimizing it for fast switching performance.
It operates within a broad temperature range from -55°C to 175°C junction temperature.
The SUP70042E-GE3 is encased in a TO-220 package, which features a standard 3-pin layout for easy mounting.
It has a maximum gate-source voltage tolerance of ±20 V, providing flexibility for various applications.
The forward voltage (Vf) is rated at 0.8 V, which is important for applications where voltage drop is critical.
This model has a height of 4.65 mm, a length of 29.51 mm, and a width of 10.51 mm.
It is suitable for industrial automation, high-power switching regulators, battery management, and inverter systems.
The SUP70042E-GE3 is an N-channel type, compatible with standard MOSFET drivers.
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