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Infineon OptiMOS 5 N-Channel MOSFET & Diode, 240A, 80V, Enhancement Mode, 8-Pin HSOG IAUS240N08S5N019ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUS240N08S5N019ATMA1 |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Package Type | HSOG |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 240A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 1.9mΩ |
| Channel Mode | Enhancement |
Key Features
- Maximum continuous drain current of 240A ensures robust power handling.
- 80V drain-source voltage suitable for high voltage environments.
- 8-pin HSOG package enables surface mounting for compact PCB layouts.
- Ultra-low Rds(on) value of 1.9mΩ improves efficiency and minimizes losses.
- Enhancement mode operation provides reliable switching characteristics.
- Qualified to AEC-Q101 standard for automotive performance.
- Ideal for starter generators, battery switches, DCDC converters, and LED lighting circuits.
- Supports operating temperatures up to 175°C for demanding applications.
Product Description
Infineon IAUS240N08S5N019ATMA1 OptiMOS 5 N-Channel MOSFET and Diode is an advanced discrete semiconductor designed for high-power switching in both automotive and industrial sectors. The 8-pin HSOG surface-mount package allows for integration in space-constrained circuit boards while delivering exceptional electrical performance.
With a maximum continuous drain current of 240A and maximum drain-source voltage of 80V, this device is well suited for demanding power conversion tasks such as starter generators, main battery switches, DCDC converters, and 48V auxiliary systems. Additional applications include LED lighting, fuel injection circuits, and in-vehicle wireless charging modules where reliability and efficiency are critical.
The OptiMOS 5 series leverages cutting-edge technology to achieve an ultra-low Rds(on) of only 1.9mΩ, thereby minimizing power dissipation and maximizing energy savings. The enhancement mode configuration ensures robust logic-level switching capability, contributing to safe and reliable performance under various load conditions.
Its thermal stability is maintained even at peak reflow temperatures up to 260°C and extended operating temperatures up to 175°C, accommodating harsh environments found in modern vehicles and industrial installations.
Maximum continuous drain current of 240A for high-power output. 80V drain-source voltage provides versatility in circuit design. Low resistance with Rds(on) at just 1.9mΩ enhances efficiency. Reliable enhancement mode operation for precision control.
Surface-mount HSOG package makes it ideal for dense PCB assemblies. Automotive qualification to AEC-Q101 assures quality and longevity. Suitable for both automotive and industrial power conversion, battery switching, and lighting applications.
Operates at up to 175°C, enabling deployment in challenging conditions.
Industrial and automotive users can employ this device for power management, switching, and load control across various sectors including manufacturing, transportation, renewable energy, and electronic product development.
Explore more MOSFET and semiconductor solutions in EnvMart's Electronics & Electricals category, featuring leading brands such as Infineon.
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Frequently Asked Questions
The maximum continuous drain current for this model is 240A, making it suitable for high-power applications.
This MOSFET can handle a maximum drain-source voltage of 80V, which is suitable for high voltage environments.
The Rds(on) value for this device is 1.9mΩ, which helps improve efficiency and minimize power losses.
It uses an 8-pin HSOG package, allowing for surface mounting on compact PCB layouts.
Yes, it is qualified to the AEC-Q101 standard, ensuring it meets automotive performance requirements.
Typical applications include starter generators, battery switches, DCDC converters, and LED lighting circuits.
This model operates at temperatures up to 175°C, accommodating demanding applications.
This device features an N-channel type configuration, which is common for enhancement mode operation.
The country of origin for this MOSFET is India.
This model belongs to the OptiMOS 5 series, known for its advanced semiconductor technology.
This MOSFET has a pin count of 8, facilitating easy integration into circuits.
The channel mode of this device is enhancement, providing reliable switching characteristics.
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