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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC011N03LSATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Infineon BSC011N03LSATMA1 OptiMOS N-Channel MOSFET is a power semiconductor device engineered for high-current, low-voltage switching applications characterized by efficient conduction and rapid switching performance. Housed in an 8-pin TDSON surface mount package measuring 6.1 mm in length and 5.35 mm in width, it supports demanding thermal and electrical environments with a maximum continuous drain current of 100 amperes and a drain-source voltage rating of 30 volts.
This enhancement mode MOSFET exhibits a very low on-resistance of 1.4 milliohms which reduces conduction losses and improves overall device efficiency. The device’s typical gate charge is 36 nanocoulombs at a gate-source voltage of 6 volts, allowing fast gate transitions necessary for high-frequency switching applications. It can dissipate up to 96 watts of power, making it suitable for demanding power stages. The maximum gate-source voltage tolerance of ±20 volts ensures robust gate protection.
Operational temperature range is from -55°C minimum up to a maximum of 150°C, necessitating adequate thermal management in application designs. The device also features a low forward voltage of 1 volt that enhances power conversion efficiency.
Typical applications include synchronous buck converters in server power supplies, high-current motor drive stages, power distribution modules in telecom racks, DC-DC conversion in inverters, as well as battery management and charging systems.
Its surface-mount TDSON package facilitates compact PCB layouts with reliable mechanical stability and thermal conductivity. PCB land pattern design should optimize soldering fillets and thermal paths for dependable operation under continuous heavy load.
Very low on-resistance of 1.4 milliohms minimizes conduction losses. High continuous drain current rating supports heavy load currents. Peak power dissipation up to 96 watts for high power applications. Typical gate charge of 36 nanocoulombs allows fast switching.
Wide operating temperature range from -55°C to 150°C. Forward voltage of 1 volt enhances efficiency. Enables efficient synchronous buck conversion and motor drives. Compact 8-pin TDSON package for surface mount assembly.
Explore more Infineon MOSFETs and semiconductor devices on EnvMart for industrial, electronics manufacturing, telecom, and power management solutions.
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