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Infineon OptiMOS-T2 Type N-Channel Power MOSFET, 120A, 80V, TO-263, IPB120N08S403ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.5mm |
| Length | 10.02mm |
| Model | IPB120N08S403ATMA1 |
| Width | 9.27mm |
| Mount Type | Surface |
| Series | OptiMOS -T2 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 2.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 128nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Type N-Channel design enables fast switching performance.
- Maximum continuous drain current of 120A supports robust power systems.
- Drain-source voltage rated at 80V, suitable for high-voltage circuits.
- TO-263 surface mount package simplifies integration in PCBs.
- Low drain-source resistance of 2.5mΩ minimizes power losses.
- Enhancement mode offers efficient gate operation.
- Maximum gate-source voltage is 20V for versatile logic compatibility.
- Automotive standard AEC-Q101 qualified for reliable automotive deployment.
Product Description
Infineon IPB120N08S403ATMA1 OptiMOS-T2 Type N-Channel Power MOSFET is engineered to deliver exceptional performance in high-power and high-voltage applications. Featuring a 120A maximum continuous drain current and 80V drain-source voltage, it provides reliable switching for demanding electronic and industrial systems.
Type N-Channel structure supports fast and efficient switching, making it ideal for power management solutions in automotive and industrial sectors. Low drain-source resistance (Rds) of 2.5mΩ reduces energy loss during operation, improving efficiency in low-voltage/high-current configurations.
Surface mount TO-263 package offers ease of installation and high thermal stability, supporting reliable PCB integration for compact electronic designs. Enhancement channel mode enables precise control via gate voltage, optimizing performance for smart controllers and high-speed digital circuits.
Maximum gate-source voltage of 20V allows compatibility with a variety of control architectures.
The MOSFET is qualified with AEC-Q101 automotive standards, ensuring rigorous reliability and suitability for automotive electronics including motor drives and power conversion systems.
Wide operating temperature range from -55°C up to 175°C permits deployment in extreme environments without degradation of electrical properties. Maximum power dissipation of 278W enables stable long-term operation in high-load scenarios such as industrial automation and energy conversion.
The 3-pin TO-263 package with surface-mount design makes it efficient for automated assembly and repair. With a typical gate charge of 128nC and forward voltage of 1.3V, it supports rapid switching with minimal losses. Dimensions (Length: 10.02mm, Width: 9.27mm, Height: 4.5mm) streamline PCB layout planning for high-density electronic modules.
Common industrial applications include power management, driving inductive loads, switching regulators, DC/DC converters, automotive controls, and commercial lighting systems. Laboratory use, manufacturing operations, and advanced electronic device prototyping benefit from its robust design and versatile performance.
For those designing power electronics in automotive, industrial manufacturing, or consumer sectors, Infineon OptiMOS-T2 N-channel MOSFET IPB120N08S403ATMA1 is an optimal choice for efficiency, reliability, and ease of integration. Explore more discrete semiconductors and electronic components in EnvMart's MOSFET range.
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Frequently Asked Questions
The maximum continuous drain current of this model is 120A, making it suitable for robust power systems.
This unit has a maximum drain-source voltage rating of 80V, which is appropriate for high-voltage circuits.
It comes in a TO-263 surface mount package, which simplifies integration into PCBs.
The drain-source resistance is rated at 2.5mΩ, which minimizes power losses during operation.
It operates within a temperature range of -55°C to 175°C, suitable for extreme environments.
The typical gate charge is 128nC, supporting rapid switching with minimal losses.
This model is qualified under the AEC-Q101 automotive standard, ensuring reliability for automotive applications.
The maximum power dissipation is rated at 278W, allowing stable long-term operation in high-load scenarios.
This MOSFET features a 3-pin configuration, which is typical for TO-263 packages.
It is a Type N-Channel MOSFET, which supports fast switching performance.
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