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Infineon OptiMOS-TM3 N-Channel MOSFET 114A, 40V, 8-Pin TSDSON Surface-Mount BSZ028N04LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.2mm |
| Length | 5.35mm |
| Model | BSZ028N04LSATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS-TM3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 114A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 63W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Offers a maximum continuous drain current of 114A for high power applications.
- Supports a maximum drain-source voltage of 40V, making it suitable for most power circuits.
- Utilizes OptiMOS-TM3 technology for enhanced performance and efficiency.
- Comes in an 8-pin TSDSON package, ideal for space-constrained designs.
- Surface-mount configuration simplifies PCB assembly and integration.
- Low drain-source resistance of 2.8mΩ minimizes energy losses and heat generation.
- Enhancement mode for precise switching control in voltage-driven operations.
- Maximum power dissipation rated at 63W for robust operation.
Product Description
Infineon BSZ028N04LSATMA1 N-Channel MOSFET is designed to deliver exceptional performance in high-current, power electronic systems. This device utilizes advanced OptiMOS-TM3 technology, providing superior thermal resistance, reliable avalanche performance, and environmentally sustainable manufacturing standards. With a rated maximum continuous drain current of 114A and a drain-source voltage of 40V, it is ideally suited for demanding industrial, automotive, and commercial power applications.
Its 8-pin TSDSON surface-mount package makes it perfect for compact, high-density circuit boards and automated assembly processes. The surface-mount design ensures excellent solderability, electrical connectivity, and mechanical stability. The fast switching speed and low drain-source resistance of 2.8mΩ enable efficient energy handling with reduced losses and minimal heat generation.
Offers high reliability and efficiency with OptiMOS-TM3 technology. Ideal for switching and power management functions in advanced electronic devices. Fully compliant with RoHS standards and halogen-free according to IEC61249-2-23.
Rated for -55°C to +150°C ambient conditions, supporting industrial and automotive deployment. Precise enhancement mode operation for voltage-driven applications. Maximum gate-source voltage of 20V, allowing flexible gate drive compatibility.
Compact package dimensions: height 1.2mm, length 5.35mm, width 6.1mm. Automotive standard not required to maximize applicability across general electronics. Superior gate charge and switching characteristics for efficient performance.
Typical use cases include industrial power supplies, motor drivers, battery management systems, DC-DC converters, and other high-performance power switching applications. Integration in laboratory and manufacturing environments is straightforward due to its robust packaging and reliable operations.
Infineon is recognized globally for innovative power semiconductor solutions - explore further MOSFETs and advanced N-channel options in the EnvMart catalogue. Find complementary products, technical documentation, and support for your project needs.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon BSZ028N04LSATMA1 is 114A, making it suitable for high power applications.
This model supports a maximum drain-source voltage of 40V, which is appropriate for most power circuits.
It comes in an 8-pin TSDSON package, which is ideal for space-constrained designs.
The drain-source resistance is rated at 2.8mΩ, which helps minimize energy losses and heat generation during operation.
The dimensions are as follows: height 1.2mm, length 5.35mm, and width 6.1mm.
The maximum power dissipation for this MOSFET is rated at 63W, ensuring robust operation under load.
It operates within a temperature range of -55°C to +150°C, suitable for industrial and automotive applications.
The maximum gate-source voltage for the Infineon BSZ028N04LSATMA1 is 20V, allowing for flexible gate drive compatibility.
This MOSFET is typically used in industrial power supplies, motor drivers, battery management systems, and DC-DC converters.
It utilizes OptiMOS-TM3 technology, which provides superior thermal resistance and reliable avalanche performance.
The Infineon BSZ028N04LSATMA1 features an N-channel type, which is suitable for enhancement mode applications.
Yes, it is fully compliant with RoHS standards and is halogen-free according to IEC61249-2-23.
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