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Vishay E Type N-Channel Power MOSFET, 13A, 800V, Enhancement, TO-220AB, 3-Pin SIHP15N80AE-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.24mm |
| Length | 27.69mm |
| Model | SIHP15N80AE-GE3 |
| Width | 9.96mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 304mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device supports up to 13A continuous drain current.
- It features a maximum drain-source voltage of 800V.
- The MOSFET operates in enhancement mode and requires a positive gate drive.
- Minimal Rds(on) at 304mΩ delivers reduced conduction losses.
- With a total power dissipation of 156W, it offers excellent thermal performance.
- Device operates reliably from -55°C to 150°C ambient.
- Supplied in a TO-220AB package with 3 pins.
- 30V maximum gate-source voltage allows robust margin for gate drive.
Product Description
Vishay SIHP15N80AE-GE3 E Type N-Channel Power MOSFET is an advanced switching device engineered for demanding applications requiring high voltage and moderate current handling. With a 13A continuous drain current and 800V drain-source voltage, it is well-suited for industrial and laboratory power stages, high-voltage converters, and snubber circuits.
This enhancement-mode N-channel MOSFET achieves conduction only with a positive gate drive, minimizing power loss with its 304mΩ Rds(on). Power dissipation reaches up to 156W, offering significant thermal endurance supported by through-hole TO-220AB packaging for direct board or heatsink mounting.
The device tolerates wide ambient temperatures from -55°C to 150°C, making it ideal for installations ranging from cold storage control to high-temperature industrial setups. Its 30V gate-source voltage ensures robust gate drive margins, while a typical gate charge of 53nC keeps MOSFET switching predictable and efficient.
Continuous drain current up to 13A and peak voltage withstand of 800V. Operates in enhancement mode with positive gate drive requirements. Features 304mΩ maximum Rds(on) for efficient switching. 156W power dissipation and TO-220AB package provide optimal thermal handling.
Wide operating temperature range for flexibility in laboratory and industrial environments.
Applications include high-voltage power conversion, snubber and clamp circuits, lighting controls, motor drive front ends, and laboratory test rigs. The device is RoHS compliant, ensuring environmental safety, and it does not carry automotive standard qualification.
Explore more Vishay products and MOSFET solutions in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13A.
It can handle a maximum drain-source voltage of 800V.
The maximum Rds(on) value is 304mΩ, which helps in reducing conduction losses.
The device has a total power dissipation capacity of 156W.
It operates reliably within a temperature range of -55°C to 150°C.
This model uses a through-hole mounting type.
It comes in a TO-220AB package type.
The maximum gate-source voltage is 30V.
The typical gate charge is 53nC at Vgs.
This model is suitable for applications such as high-voltage power conversion, snubber and clamp circuits, and motor drive front ends.
The dimensions are 27.69mm in length, 9.96mm in width, and 4.24mm in height.
Yes, this device is RoHS compliant, ensuring environmental safety.
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