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Vishay Dual N-Channel MOSFET, 101A, 30V, Enhancement, 8-Pin PowerPAK 1212 Package SISF06DN-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 0.73mm
Length 3.3mm
Model SISF06DN-T1-GE3
Width 3.3mm
Mount Type Surface
Series SiSF06DN
Maximum Operating Temperature 150°C
Package Type PowerPAK 1212
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type Type N
Maximum Continuous Drain Current Id 101A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 0.0045Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 69.4W
Typical Gate Charge Qg @ Vgs 30nC
Maximum Gate Source Voltage Vgs 20V
Transistor Configuration Dual

Key Features

  • Provides high current handling with a maximum continuous drain current of 101A.
  • Supports operation up to a maximum drain-source voltage of 30V, making it suitable for power switching applications.
  • Features enhancement mode for efficient switching and low source-to-source on-resistance design.
  • Compact 8-pin PowerPAK 1212 package is optimized for surface mounting on PCBs.
  • Dual N-channel construction allows integration in common-drain circuits or parallel load control.
  • Low maximum drain-source resistance (0.0045Ω) ensures minimal power loss and high efficiency.
  • Thermally optimized with maximum power dissipation of 69.4W.
  • Broad operating temperature range from -55°C to 150°C for reliability in demanding environments.

Product Description

The Vishay SISF06DN-T1-GE3 is a dual N-channel enhancement-mode MOSFET designed for high-performance power management, switching, and general-purpose load control applications. This device features two N-channel MOSFETs with a common drain configuration, allowing for efficient integration in circuits requiring parallel or differential operation. Its advanced TrenchFET Gen IV technology delivers extremely low source-to-source on-resistance (Rds(on)) of only 0.0045Ω, resulting in high efficiency and reduced thermal losses during operation.

Engineered to handle a maximum continuous drain current of 101A per channel and a peak drain-source voltage of 30V, this MOSFET is optimized for industrial, automotive, and general electronic switching circuits. The device is housed in a compact 8-pin PowerPAK 1212 package, ideally suited for surface mount PCB assembly, minimizing board footprint while maximizing electrical and thermal performance. Its low typical gate charge (30nC @ Vgs) and a maximum allowable gate-source voltage of 20V ensure fast switching speeds while maintaining reliable operation.

The SISF06DN-T1-GE3 offers robust operation over a wide temperature range from -55°C to 150°C, supporting usage in demanding environments such as motor drives, DC-DC converters, battery management systems, and high-efficiency power supplies. Its dual-channel configuration makes it ideal for applications requiring synchronized or redundant switching, and the thermally enhanced package supports a maximum power dissipation of 69.4W for reliable performance under heavy load.

The low on-resistance and high current rating make the SISF06DN-T1-GE3 particularly well suited for high-current and low-voltage switching tasks where power loss minimization is a priority. The surface-mount PowerPAK 1212 design offers advantages for both industrial-scale automated production and compact end-user electronics, while supporting automated optical inspection due to clear and consistent package markings.

Typical use cases include industrial machine controllers, electronic load management, high-efficiency DC power conversion, motor control, and automation systems. The device's construction ensures reliable performance even under demanding conditions, ensuring system longevity and minimizing maintenance requirements.

Explore more MOSFETs and semiconductor solutions from Vishay and other leading brands in the Electronics & Electricals category on EnvMart.

Vishay Dual N-Channel MOSFET, 101A, 30V, Enhancement, 8-Pin PowerPAK 1212 Package SISF06DN-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for the SISF06DN-T1-GE3 is 101A per channel.

This MOSFET supports a maximum drain-source voltage of 30V.

It features a low maximum drain-source resistance of 0.0045Ω, which helps minimize power loss during operation.

The SISF06DN-T1-GE3 is housed in a compact 8-pin PowerPAK 1212 package, designed for surface mounting on PCBs.

The typical gate charge for the SISF06DN-T1-GE3 is 30nC at a gate-source voltage (Vgs) of 20V.

It operates over a broad temperature range from -55°C to 150°C, making it suitable for demanding environments.

The maximum power dissipation for the SISF06DN-T1-GE3 is 69.4W.

This model features two elements per chip, as it is a dual N-channel MOSFET.

The SISF06DN-T1-GE3 uses an enhancement mode N-channel configuration.

The dimensions of the PowerPAK 1212 package are 3.3mm in length and width, with a height of 0.73mm.

This MOSFET is suitable for applications such as motor drives, DC-DC converters, and high-efficiency power supplies.

The maximum allowable gate-source voltage for the SISF06DN-T1-GE3 is 20V.

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